Obtaining Two-Dimensional Electron Gas in Free Space without Resorting to Electron Doping: An Electride Based Design
Nearly free electron (NFE) states are widely existed on atomically smooth surfaces in two-dimensional materials. Since they are mainly distributed in free space, these states can in principle provide ideal electron transport channels without nuclear scattering. Unfortunately, NFE states are typicall...
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Veröffentlicht in: | Journal of the American Chemical Society 2014-09, Vol.136 (38), p.13313-13318 |
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Sprache: | eng |
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Zusammenfassung: | Nearly free electron (NFE) states are widely existed on atomically smooth surfaces in two-dimensional materials. Since they are mainly distributed in free space, these states can in principle provide ideal electron transport channels without nuclear scattering. Unfortunately, NFE states are typically unoccupied, and electron doping is required to shift them toward the Fermi level and, thus, to be involved in electron transport. Instead of occupying these NFE states, it is more desirable to have intrinsic nucleus-free two-dimensional electron gas in free space (2DEG-FS) at the Fermi level without relying on doping. Inspired by a recently identified electride material, we suggest that Ca2N monolayer should possess such a 2DEG-FS state, which is then confirmed by our first-principles calculations. Phonon dispersion in Ca2N monolayer shows no imagery frequency indicating that the monolayer structure is stable. A mechanical analysis demonstrates that Ca2N bulk exfoliation is feasible to produce a freestanding monolayer. However, in real applications, the strong chemical activity of 2DEG-FS may become a practical issue. It is found that some ambient molecules can dissociatively adsorb on the Ca2N monolayer, accompanying with a significant charge transfer from the 2DEG-FS state to adsorbates. To protect the 2DEG-FS state from molecule adsorption, we predict that graphane can be used as an effective encapsulating material. A well-encapsulated intrinsic 2DEG-FS state is expected to play an important role in low-dimensional electronics by realizing nuclear scattering free transport. |
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ISSN: | 0002-7863 1520-5126 |
DOI: | 10.1021/ja5065125 |