High-Performance Solution-Processable N-Shaped Organic Semiconducting Materials with Stabilized Crystal Phase

High-Performance Solution-Processable N-Shaped Organic Semiconducting Materials with Stabilized Crystal Phase

N‐shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p‐type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm2 V–1 s–1 (12.1 cm2 V–1 s–...

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Veröffentlicht in:Advanced materials (Weinheim) 2014-07, Vol.26 (26), p.4546-4551
Hauptverfasser: Mitsui, Chikahiko, Okamoto, Toshihiro, Yamagishi, Masakazu, Tsurumi, Junto, Yoshimoto, Kazumi, Nakahara, Katsumasa, Soeda, Junshi, Hirose, Yuri, Sato, Hiroyasu, Yamano, Akihito, Uemura, Takafumi, Takeya, Jun
Format: Artikel
Sprache:eng
Schlagworte:
Carrier mobility
Crystal structure
Crystals
Field effect transistors
Hall effect
high mobility
Ionization potentials
organic semiconductors
Semiconductor devices
Semiconductors
solution-crystallized film
stabilized crystal phase
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Beschreibung
Zusammenfassung:N‐shaped organic semiconductors are synthesized via four steps from a readily available starting material. Such semiconductors exhibit preferable ionization potential for p‐type operation, thermally stable crystalline phase over 200 °C, and high carrier mobility up to 16 cm2 V–1 s–1 (12.1 cm2 V–1 s–1 on average) with small threshold voltages in solution‐crystallized field‐effect transistors.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201400289