Formation of Pb sub(0.6)Sr sub(0.4)(Ti sub(0.97)Mg sub(0.03) )O sub(2.97) thin films on assembled bottom electrodes with titanium silicide nanowires

Multi-layered bottom electrodes constituted by conductive Ti sub(5)Si sub(3) thin films with and without TiSi nanowires were prepared on glass substrates by Atmosphere Pressure Chemical Vapor Deposition (APCVD) method. Pb sub(0.6)Sr sub(0.4)(Ti sub(0.97)Mg sub(0.03) )O sub(2.97) (PST) thin films were deposited on the Ti-Si bottom electrodes by Radio-frequency Magnetron Sputtering Method. The morphology and phase structure of the PST thin films were observed and identified by FE-SEM and XRD, respectively. The dielectric properties of the PST thin films deposited on Ti-Si substrates were measured by Agilent 4294A Impedance Analyzer. Results show that the formation ability of the PST thin films can be reinforced by increasing crystallinity of Ti sub(5)Si sub(3) thin films and increasing amount of TiSi nanowires. The preparation temperature of the PST thin films deposited on Ti sub(5)Si sub(3) and TiSi-nanowire/Ti sub(5)Si sub(3) bottom electrodes decreases by 75 degree C and 98 degree C, respectively, compared with the situation on ITO/glass substrate. The permittivity of the PST thin films deposited on TiSi-nanowire/Ti sub(5)Si sub(3) bottom electrode is about 4 times higher than that deposited on ITO. The lowest dielectric loss of PST/TiSi-nanowire/Ti sub(5)Si sub(3) thin films is