Intrinsic spin-orbit effect in substrate-graphene Corbino devices
Electronic transport through the Corbino disk in a doped graphene–substrate system is studied taking into account intrinsic spin–orbit interaction (SOI) and perpendicular magnetic field. By combining the intrinsic SOI and substrate–graphene effects, we are able to break the Kramers degeneracy associ...
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| Veröffentlicht in: | Physica Status Solidi. B: Basic Solid State Physics 2014-07, Vol.251 (7), p.1451-1455 |
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| container_title | Physica Status Solidi. B: Basic Solid State Physics |
| container_volume | 251 |
| creator | Villegas-Lelovsky, Leonardo Correa, Jorge Luis Huamani Qu, Fanyao |
| description | Electronic transport through the Corbino disk in a doped graphene–substrate system is studied taking into account intrinsic spin–orbit interaction (SOI) and perpendicular magnetic field. By combining the intrinsic SOI and substrate–graphene effects, we are able to break the Kramers degeneracy associated to sz=±1 degrees of freedom and to control the spin‐polarized resonant transmission channels. The latter manifests itself in both conductance and Fano factor characteristics. As an astonishing result, we have pointed out a new universal limit for the quantum shot noise, related to this particular topology. |
| doi_str_mv | 10.1002/pssb.201451133 |
| format | Article |
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| language | eng |
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| source | Wiley Journals |
| subjects | Channels Conductance Degrees of freedom Electronics graphene Magnetic fields magnetoresistance Mathematical analysis Solid state physics spin-orbit coupling Transport |
| title | Intrinsic spin-orbit effect in substrate-graphene Corbino devices |
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