Intrinsic spin-orbit effect in substrate-graphene Corbino devices

Electronic transport through the Corbino disk in a doped graphene–substrate system is studied taking into account intrinsic spin–orbit interaction (SOI) and perpendicular magnetic field. By combining the intrinsic SOI and substrate–graphene effects, we are able to break the Kramers degeneracy associated to sz=±1 degrees of freedom and to control the spin‐polarized resonant transmission channels. The latter manifests itself in both conductance and Fano factor characteristics. As an astonishing result, we have pointed out a new universal limit for the quantum shot noise, related to this particular topology.