Anodized ITO Thin-Film Transistors

This paper reports that the electrical, optical and structural properties of ITO film can be significantly modulated by an anodization treatment. An ITO TFT technology based on the anodization approach is then proposed and demonstrated, which results in an ideal homo‐junction device structure with the source/drain/pixel electrodes and channel region made of one single ITO layer. A preliminary device fabrication at room temperature shows the resulting TFT has an on/off current ratio exceeding 1 × 108, a saturation mobility of 29.0 cm2 V−1 s−1, and a subthreshold swing of 0.20 V per decade. This technology also allows a feasible VT adjustment and muti‐VT implementation. Electrical, optical, and structural properties of ITO film are significantly modulated by an anodization process. The anodized ITO TFT technology results in an ideal homo‐junction structure with source/drain/pixel electrodes and channel region all made of one single ITO layer. The room temperature fabricated TFT shows an on/off ratio over 108, a mobility of 29.0 cm2 V−1 s−1 and subthreshold swing of 0.20 V per decade. This technology also allows a feasible VT adjustment and muti‐VT implementation.