Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration

Design of an ultra-compact electro-absorption modulator comprised of a deposited TiN/HfO₂/ITO/Cu stack for CMOS backend integration

An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2

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Veröffentlicht in:Optics express 2014-07, Vol.22 (15), p.17930-17947
Hauptverfasser: Zhu, Shiyang, Lo, G Q, Kwong, D L
Format: Artikel
Sprache:eng
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Zusammenfassung:An ultra-compact electro-absorption (EA) modulator operating around 1.55-μm telecom wavelengths is proposed and theoretically investigated. The modulator is comprised of a stack of TiN/HfO2
ISSN:1094-4087
DOI:10.1364/OE.22.017930