Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

Oxide Resistive Memory with Functionalized Graphene as Built-in Selector Element

A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator‐metal transition‐like volatile threshold switching, creating a 1 selector – 1 resistor (1S1R) structure with a built‐in selector and leading to a...

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Veröffentlicht in:Advanced materials (Weinheim) 2014-06, Vol.26 (22), p.3693-3699
Hauptverfasser: Yang, Yuchao, Lee, Jihang, Lee, Seunghyun, Liu, Che-Hung, Zhong, Zhaohui, Lu, Wei
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Electrodes
Graphene
Nonlinearity
Oxides
resistive memory
Resistors
RRAM
Selectors
sneak path
Switching
threshold switching
trap-limited conduction
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Zusammenfassung:A resistive memory with graphene electrodes is demonstrated. The spontaneous functionalization of graphene during device fabrication results in insulator‐metal transition‐like volatile threshold switching, creating a 1 selector – 1 resistor (1S1R) structure with a built‐in selector and leading to a desirable highly nonlinear on‐state behavior of the oxide resistive memory.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201400270