Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates
CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temper...
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| Veröffentlicht in: | Physica Status Solidi. B: Basic Solid State Physics 2014-04, Vol.251 (4), p.737-740 |
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| container_issue | 4 |
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| container_title | Physica Status Solidi. B: Basic Solid State Physics |
| container_volume | 251 |
| creator | Li, L Wang, S W Mu, G Y Yin, X Tang, Y Duan, W B Yi, L X |
| description | CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO sub(2):Sm super(3+) films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm sub(2)O sub(3) thickness and annealing time on the samples' photoluminescence was conducted. |
| doi_str_mv | 10.1002/pssb.201349096 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_miscellaneous_1541435739</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1541435739</sourcerecordid><originalsourceid>FETCH-proquest_miscellaneous_15414357393</originalsourceid><addsrcrecordid>eNqVTk1LAzEUDKLg-nH1_I7tYdu8ZLdLzkXRk4d6L9n6ViP5WPclBf-9W-wfEAZmGIaZEeIB5QqlVOuRuV8pibox0mwuRIWtwlqbFi9FJXUnazSduhY3zF9SNh2aTSWOL_FInN2HzS5FmDF-ppx8CS4SHygeCMYpjTRlRwxpgC29Apd-oZbrXTirP0fDEkLx2Xn7QxMMzgeG3jK9n3p37hTiPNlMfCeuBuuZ7s98KxZPj2_b53re-i7zoX1w87r3NlIqvMe2wUa3nTb6H9FfPhZWRw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1541435739</pqid></control><display><type>article</type><title>Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates</title><source>Wiley Online Library All Journals</source><creator>Li, L ; Wang, S W ; Mu, G Y ; Yin, X ; Tang, Y ; Duan, W B ; Yi, L X</creator><creatorcontrib>Li, L ; Wang, S W ; Mu, G Y ; Yin, X ; Tang, Y ; Duan, W B ; Yi, L X</creatorcontrib><description>CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO sub(2):Sm super(3+) films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm sub(2)O sub(3) thickness and annealing time on the samples' photoluminescence was conducted.</description><identifier>ISSN: 0370-1972</identifier><identifier>EISSN: 1521-3951</identifier><identifier>DOI: 10.1002/pssb.201349096</identifier><language>eng</language><subject>Annealing ; Decay ; Deposition ; Luminescence ; Multilayers ; Photoluminescence ; Silicon substrates ; Solid state physics</subject><ispartof>Physica Status Solidi. B: Basic Solid State Physics, 2014-04, Vol.251 (4), p.737-740</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Li, L</creatorcontrib><creatorcontrib>Wang, S W</creatorcontrib><creatorcontrib>Mu, G Y</creatorcontrib><creatorcontrib>Yin, X</creatorcontrib><creatorcontrib>Tang, Y</creatorcontrib><creatorcontrib>Duan, W B</creatorcontrib><creatorcontrib>Yi, L X</creatorcontrib><title>Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates</title><title>Physica Status Solidi. B: Basic Solid State Physics</title><description>CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO sub(2):Sm super(3+) films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm sub(2)O sub(3) thickness and annealing time on the samples' photoluminescence was conducted.</description><subject>Annealing</subject><subject>Decay</subject><subject>Deposition</subject><subject>Luminescence</subject><subject>Multilayers</subject><subject>Photoluminescence</subject><subject>Silicon substrates</subject><subject>Solid state physics</subject><issn>0370-1972</issn><issn>1521-3951</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqVTk1LAzEUDKLg-nH1_I7tYdu8ZLdLzkXRk4d6L9n6ViP5WPclBf-9W-wfEAZmGIaZEeIB5QqlVOuRuV8pibox0mwuRIWtwlqbFi9FJXUnazSduhY3zF9SNh2aTSWOL_FInN2HzS5FmDF-ppx8CS4SHygeCMYpjTRlRwxpgC29Apd-oZbrXTirP0fDEkLx2Xn7QxMMzgeG3jK9n3p37hTiPNlMfCeuBuuZ7s98KxZPj2_b53re-i7zoX1w87r3NlIqvMe2wUa3nTb6H9FfPhZWRw</recordid><startdate>20140401</startdate><enddate>20140401</enddate><creator>Li, L</creator><creator>Wang, S W</creator><creator>Mu, G Y</creator><creator>Yin, X</creator><creator>Tang, Y</creator><creator>Duan, W B</creator><creator>Yi, L X</creator><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20140401</creationdate><title>Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates</title><author>Li, L ; Wang, S W ; Mu, G Y ; Yin, X ; Tang, Y ; Duan, W B ; Yi, L X</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_miscellaneous_15414357393</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Decay</topic><topic>Deposition</topic><topic>Luminescence</topic><topic>Multilayers</topic><topic>Photoluminescence</topic><topic>Silicon substrates</topic><topic>Solid state physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, L</creatorcontrib><creatorcontrib>Wang, S W</creatorcontrib><creatorcontrib>Mu, G Y</creatorcontrib><creatorcontrib>Yin, X</creatorcontrib><creatorcontrib>Tang, Y</creatorcontrib><creatorcontrib>Duan, W B</creatorcontrib><creatorcontrib>Yi, L X</creatorcontrib><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, L</au><au>Wang, S W</au><au>Mu, G Y</au><au>Yin, X</au><au>Tang, Y</au><au>Duan, W B</au><au>Yi, L X</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates</atitle><jtitle>Physica Status Solidi. B: Basic Solid State Physics</jtitle><date>2014-04-01</date><risdate>2014</risdate><volume>251</volume><issue>4</issue><spage>737</spage><epage>740</epage><pages>737-740</pages><issn>0370-1972</issn><eissn>1521-3951</eissn><abstract>CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO sub(2):Sm super(3+) films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm sub(2)O sub(3) thickness and annealing time on the samples' photoluminescence was conducted.</abstract><doi>10.1002/pssb.201349096</doi></addata></record> |
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| source | Wiley Online Library All Journals |
| subjects | Annealing Decay Deposition Luminescence Multilayers Photoluminescence Silicon substrates Solid state physics |
| title | Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates |
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