Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates

Investigation on photoluminescence properties of CeO sub(2)/Sm sub(2)O sub(3 ) multilayer films based on Si substrates

CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temper...

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Veröffentlicht in:Physica Status Solidi. B: Basic Solid State Physics 2014-04, Vol.251 (4), p.737-740
Hauptverfasser: Li, L, Wang, S W, Mu, G Y, Yin, X, Tang, Y, Duan, W B, Yi, L X
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Decay
Deposition
Luminescence
Multilayers
Photoluminescence
Silicon substrates
Solid state physics
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Zusammenfassung:CeO sub(2)/Sm sub(2)O sub(3) multilayer films were deposited on p-type Si wafers by e-beam evaporation technology. Four typical photoluminescence peaks of Sm super(3+) ions located around 572, 615, 656, and 719nm were observed after the samples were annealed in an oxidizing atmosphere at high temperature. The luminescence properties of CeO sub(2):Sm super(3+) films were characterized by excitation, emission spectra, and decay curves. In addition, a study of the effects of Sm sub(2)O sub(3) thickness and annealing time on the samples' photoluminescence was conducted.
ISSN:0370-1972
1521-3951
DOI:10.1002/pssb.201349096