Furan fused V-shaped organic semiconducting materials with high emission and high mobility

Furan fused V-shaped organic semiconducting materials with high emission and high mobility

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2',3'-d]furan (DNF-V) derivatives. DNF-V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF-V derivatives showed an excellent carrier mobility of up to 1.3 c...

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Veröffentlicht in:Chemical communications (Cambridge, England) England), 2014-05, Vol.50 (40), p.5342-5344
Hauptverfasser: Nakahara, Katsumasa, Mitsui, Chikahiko, Okamoto, Toshihiro, Yamagishi, Masakazu, Matsui, Hiroyuki, Ueno, Takanari, Tanaka, Yuji, Yano, Masafumi, Matsushita, Takeshi, Soeda, Junshi, Hirose, Yuri, Sato, Hiroyasu, Yamano, Akihito, Takeya, Jun
Format: Artikel
Sprache:eng
Schlagworte:
Alkylation
Carrier mobility
Derivatives
Emission
Emissivity
Furans
Semiconductor devices
Transistors
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Beschreibung
Zusammenfassung:We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2',3'-d]furan (DNF-V) derivatives. DNF-V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF-V derivatives showed an excellent carrier mobility of up to 1.3 cm(2) V(-1) s(-1), thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.
ISSN:1359-7345
1364-548X
DOI:10.1039/c3cc47577h