Hybrid zinc oxide:Cu-phthalocyanine bulk-heterojunction photovoltaic device

The hybrid bulk-heterojunction layer composed of Ga-doped ZnO (GZO) and Cu-phthalocyanine (CuPC) semiconductors was prepared by the simultaneous evaporation system involving the electron-beam evaporation for the Ga-doped ZnO and the thermal evaporation for the Cu-phthalocyanine. A hybrid CuPC/CuPC:G...

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Veröffentlicht in:	RSC advances 2014-01, Vol.4 (29), p.14956-14961
Hauptverfasser:	Izaki, Masanobu, Hisamatsu, Ryo, Saito, Takamasa, Murata, Kazufumi, Sasano, Junji, Shinagawa, Tsutomu
Format:	Artikel
Sprache:	eng
Schlagworte:	Copper Devices Evaporation Photovoltaic cells Semiconductors Solar cells Zinc Zinc oxide
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container_end_page	14961
container_issue	29
container_start_page	14956
container_title	RSC advances
container_volume	4
creator	Izaki, Masanobu Hisamatsu, Ryo Saito, Takamasa Murata, Kazufumi Sasano, Junji Shinagawa, Tsutomu
description	The hybrid bulk-heterojunction layer composed of Ga-doped ZnO (GZO) and Cu-phthalocyanine (CuPC) semiconductors was prepared by the simultaneous evaporation system involving the electron-beam evaporation for the Ga-doped ZnO and the thermal evaporation for the Cu-phthalocyanine. A hybrid CuPC/CuPC:GZO/n-ZnO photovoltaic device was constructed using electrodeposition of the n-ZnO layer followed by simultaneous evaporation techniques. The photo-assisted kelvin force microscopy (PKFM) measurements indicated that the increase in free carriers generated by the dissociation of excitons was induced by using the bulk-heterojunction structure due to the increase in heterointerface area. The CuPC/CuPC:GZO/n-ZnO photovoltaic device showed excellent rectification features and improved photovoltaic performance compared with the layered CuPC/n-ZnO photovoltaic device.
doi_str_mv	10.1039/c4ra01051e
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fullrecord	<record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1541406992</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1530993225</sourcerecordid><originalsourceid>FETCH-LOGICAL-c322t-88211e5b70d2a4e62b36d41a73f3dd8d8635226bbd3e84e45b1816ea017380af3</originalsourceid><addsrcrecordid>eNqNkEtLw0AUhQdRsNRu_AVZihCddxN3JdRWLAii6zCPGzI1zcSZpFh_vdG6cOndnLv4OJxzELok-IZglt8aHhQmWBA4QROKuUwplvnpn_8czWLc4vGkIFSSCXpcH3RwNvl0rUn8h7NwVwxpV_e1arw5qNa1kOiheUtr6CH47dCa3vk26Wrf-71veuVMYmHvDFygs0o1EWa_OkWv98uXYp1unlYPxWKTGkZpn2YZJQSEnmNLFQdJNZOWEzVnFbM2s5lkglKptWWQceBCk4xIGKvNWYZVxabo6ujbBf8-QOzLnYsGmka14IdYEsEJH9vm9B8ow3k-xhIjen1ETfAxBqjKLridCoeS4PJ737Lgz4uffZfsC-SVbOY</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1530993225</pqid></control><display><type>article</type><title>Hybrid zinc oxide:Cu-phthalocyanine bulk-heterojunction photovoltaic device</title><source>Royal Society Of Chemistry Journals</source><creator>Izaki, Masanobu ; Hisamatsu, Ryo ; Saito, Takamasa ; Murata, Kazufumi ; Sasano, Junji ; Shinagawa, Tsutomu</creator><creatorcontrib>Izaki, Masanobu ; Hisamatsu, Ryo ; Saito, Takamasa ; Murata, Kazufumi ; Sasano, Junji ; Shinagawa, Tsutomu</creatorcontrib><description>The hybrid bulk-heterojunction layer composed of Ga-doped ZnO (GZO) and Cu-phthalocyanine (CuPC) semiconductors was prepared by the simultaneous evaporation system involving the electron-beam evaporation for the Ga-doped ZnO and the thermal evaporation for the Cu-phthalocyanine. A hybrid CuPC/CuPC:GZO/n-ZnO photovoltaic device was constructed using electrodeposition of the n-ZnO layer followed by simultaneous evaporation techniques. The photo-assisted kelvin force microscopy (PKFM) measurements indicated that the increase in free carriers generated by the dissociation of excitons was induced by using the bulk-heterojunction structure due to the increase in heterointerface area. The CuPC/CuPC:GZO/n-ZnO photovoltaic device showed excellent rectification features and improved photovoltaic performance compared with the layered CuPC/n-ZnO photovoltaic device.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c4ra01051e</identifier><language>eng</language><subject>Copper ; Devices ; Evaporation ; Photovoltaic cells ; Semiconductors ; Solar cells ; Zinc ; Zinc oxide</subject><ispartof>RSC advances, 2014-01, Vol.4 (29), p.14956-14961</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c322t-88211e5b70d2a4e62b36d41a73f3dd8d8635226bbd3e84e45b1816ea017380af3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Izaki, Masanobu</creatorcontrib><creatorcontrib>Hisamatsu, Ryo</creatorcontrib><creatorcontrib>Saito, Takamasa</creatorcontrib><creatorcontrib>Murata, Kazufumi</creatorcontrib><creatorcontrib>Sasano, Junji</creatorcontrib><creatorcontrib>Shinagawa, Tsutomu</creatorcontrib><title>Hybrid zinc oxide:Cu-phthalocyanine bulk-heterojunction photovoltaic device</title><title>RSC advances</title><description>The hybrid bulk-heterojunction layer composed of Ga-doped ZnO (GZO) and Cu-phthalocyanine (CuPC) semiconductors was prepared by the simultaneous evaporation system involving the electron-beam evaporation for the Ga-doped ZnO and the thermal evaporation for the Cu-phthalocyanine. A hybrid CuPC/CuPC:GZO/n-ZnO photovoltaic device was constructed using electrodeposition of the n-ZnO layer followed by simultaneous evaporation techniques. The photo-assisted kelvin force microscopy (PKFM) measurements indicated that the increase in free carriers generated by the dissociation of excitons was induced by using the bulk-heterojunction structure due to the increase in heterointerface area. The CuPC/CuPC:GZO/n-ZnO photovoltaic device showed excellent rectification features and improved photovoltaic performance compared with the layered CuPC/n-ZnO photovoltaic device.</description><subject>Copper</subject><subject>Devices</subject><subject>Evaporation</subject><subject>Photovoltaic cells</subject><subject>Semiconductors</subject><subject>Solar cells</subject><subject>Zinc</subject><subject>Zinc oxide</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNqNkEtLw0AUhQdRsNRu_AVZihCddxN3JdRWLAii6zCPGzI1zcSZpFh_vdG6cOndnLv4OJxzELok-IZglt8aHhQmWBA4QROKuUwplvnpn_8czWLc4vGkIFSSCXpcH3RwNvl0rUn8h7NwVwxpV_e1arw5qNa1kOiheUtr6CH47dCa3vk26Wrf-71veuVMYmHvDFygs0o1EWa_OkWv98uXYp1unlYPxWKTGkZpn2YZJQSEnmNLFQdJNZOWEzVnFbM2s5lkglKptWWQceBCk4xIGKvNWYZVxabo6ujbBf8-QOzLnYsGmka14IdYEsEJH9vm9B8ow3k-xhIjen1ETfAxBqjKLridCoeS4PJ737Lgz4uffZfsC-SVbOY</recordid><startdate>20140101</startdate><enddate>20140101</enddate><creator>Izaki, Masanobu</creator><creator>Hisamatsu, Ryo</creator><creator>Saito, Takamasa</creator><creator>Murata, Kazufumi</creator><creator>Sasano, Junji</creator><creator>Shinagawa, Tsutomu</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7TB</scope><scope>8BQ</scope><scope>8FD</scope><scope>FR3</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140101</creationdate><title>Hybrid zinc oxide:Cu-phthalocyanine bulk-heterojunction photovoltaic device</title><author>Izaki, Masanobu ; Hisamatsu, Ryo ; Saito, Takamasa ; Murata, Kazufumi ; Sasano, Junji ; Shinagawa, Tsutomu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c322t-88211e5b70d2a4e62b36d41a73f3dd8d8635226bbd3e84e45b1816ea017380af3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Copper</topic><topic>Devices</topic><topic>Evaporation</topic><topic>Photovoltaic cells</topic><topic>Semiconductors</topic><topic>Solar cells</topic><topic>Zinc</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Izaki, Masanobu</creatorcontrib><creatorcontrib>Hisamatsu, Ryo</creatorcontrib><creatorcontrib>Saito, Takamasa</creatorcontrib><creatorcontrib>Murata, Kazufumi</creatorcontrib><creatorcontrib>Sasano, Junji</creatorcontrib><creatorcontrib>Shinagawa, Tsutomu</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Izaki, Masanobu</au><au>Hisamatsu, Ryo</au><au>Saito, Takamasa</au><au>Murata, Kazufumi</au><au>Sasano, Junji</au><au>Shinagawa, Tsutomu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Hybrid zinc oxide:Cu-phthalocyanine bulk-heterojunction photovoltaic device</atitle><jtitle>RSC advances</jtitle><date>2014-01-01</date><risdate>2014</risdate><volume>4</volume><issue>29</issue><spage>14956</spage><epage>14961</epage><pages>14956-14961</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>The hybrid bulk-heterojunction layer composed of Ga-doped ZnO (GZO) and Cu-phthalocyanine (CuPC) semiconductors was prepared by the simultaneous evaporation system involving the electron-beam evaporation for the Ga-doped ZnO and the thermal evaporation for the Cu-phthalocyanine. A hybrid CuPC/CuPC:GZO/n-ZnO photovoltaic device was constructed using electrodeposition of the n-ZnO layer followed by simultaneous evaporation techniques. The photo-assisted kelvin force microscopy (PKFM) measurements indicated that the increase in free carriers generated by the dissociation of excitons was induced by using the bulk-heterojunction structure due to the increase in heterointerface area. The CuPC/CuPC:GZO/n-ZnO photovoltaic device showed excellent rectification features and improved photovoltaic performance compared with the layered CuPC/n-ZnO photovoltaic device.</abstract><doi>10.1039/c4ra01051e</doi><tpages>6</tpages></addata></record>
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subjects	Copper Devices Evaporation Photovoltaic cells Semiconductors Solar cells Zinc Zinc oxide
title	Hybrid zinc oxide:Cu-phthalocyanine bulk-heterojunction photovoltaic device
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