Low-Power consumption Franz-Keldysh effect plasmonic modulator
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm lon...
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Veröffentlicht in: | Optics express 2014-05, Vol.22 (9), p.11236-11243 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm long modulator is demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption is as low as 20 fJ/bit. |
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ISSN: | 1094-4087 1094-4087 |
DOI: | 10.1364/OE.22.011236 |