Low-Power consumption Franz-Keldysh effect plasmonic modulator

In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm lon...

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Veröffentlicht in:Optics express 2014-05, Vol.22 (9), p.11236-11243
Hauptverfasser: Abadía, N, Bernadin, T, Chaisakul, P, Olivier, S, Marris-Morini, D, Espiau de Lamaëstre, R, Weeber, J C, Vivien, L
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Sprache:eng
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Zusammenfassung:In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 dB extinction ratio for a 30 µm long modulator is demonstrated under 3 V bias voltage at an operation wavelength of 1647 nm. The estimated energy consumption is as low as 20 fJ/bit.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.22.011236