Solution Epitaxial Growth of Cobalt Nanowires on Crystalline Substrates for Data Storage Densities beyond 1 Tbit/in2

The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystallin...

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Veröffentlicht in:Nano letters 2014-06, Vol.14 (6), p.3481-3486
Hauptverfasser: Liakakos, Nikolaos, Blon, Thomas, Achkar, Charbel, Vilar, Virginie, Cormary, Benoit, Tan, Reasmey P, Benamara, Omar, Chaboussant, Grégory, Ott, Frédéric, Warot-Fonrose, Bénédicte, Snoeck, Etienne, Chaudret, Bruno, Soulantica, Katerina, Respaud, Marc
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Sprache:eng
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Zusammenfassung:The implementation of nano-objects in numerous emerging applications often demands their integration in macroscopic devices. Here we present the bottom-up epitaxial solution growth of high-density arrays of vertical 5 nm diameter single-crystalline metallic cobalt nanowires on wafer-scale crystalline metal surfaces. The nanowires form regular hexagonal arrays on unpatterned metallic films. These hybrid heterostructures present an important perpendicular magnetic anisotropy and pave the way to a high density magnetic recording device, with capacities above 10 Terabits/in2. This method bypasses the need of assembling and orientating free colloidal nanocrystals on surfaces. Its generalization to other materials opens new perspectives toward many applications.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl501018z