Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films

Clear resistance switching with ILRS/IHRS>102 in Bi4Ti3O12 films annealed at 550°C–650°C was observed. [Display omitted] •Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent...

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Veröffentlicht in:	Microelectronic engineering 2014-01, Vol.113, p.1-4
Hauptverfasser:	Sun, Bing-Cheng, Wang, Hua, Xu, Ji-Wen, Yang, Ling, Zhou, Shang-Ju, Zhang, Yu-Pei, Li, Zhi-Da
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Annealing temperature Bi4Ti3O12 Dielectric Dielectrics High resistance Microelectronics Optimization Resistance switching Sol gel process Sol–gel Switching Thin films
Online-Zugang:	Volltext
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