Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films

Clear resistance switching with ILRS/IHRS>102 in Bi4Ti3O12 films annealed at 550°C–650°C was observed. [Display omitted] •Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent RRAM device with a structure of Ag/Bi4Ti3O12/Pt was fabricated. Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by sol–gel method were studied. The electrical characteristics and dielectric properties of Bi4Ti3O12 films annealed at various temperatures at low-resistance and high-resistance states are described. Clear resistance switching of ILRS/IHRS>102 was observed with electric sweeps in samples that were annealed at various temperatures. The conduction mechanisms at the low resistance state (LRS) and high resistance state (HRS) are Ohmic and Space-Charge-Limited-Current (SCLC) conduction, respectively. A single phase was formed when a Bi4Ti3O12 sample was annealed at 550°C. Optimal condition could be obtained when annealed at 600°C.