Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films
Clear resistance switching with ILRS/IHRS>102 in Bi4Ti3O12 films annealed at 550°C–650°C was observed. [Display omitted] •Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent...
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| Veröffentlicht in: | Microelectronic engineering 2014-01, Vol.113, p.1-4 |
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| container_title | Microelectronic engineering |
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| creator | Sun, Bing-Cheng Wang, Hua Xu, Ji-Wen Yang, Ling Zhou, Shang-Ju Zhang, Yu-Pei Li, Zhi-Da |
| description | Clear resistance switching with ILRS/IHRS>102 in Bi4Ti3O12 films annealed at 550°C–650°C was observed. [Display omitted]
•Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent RRAM device with a structure of Ag/Bi4Ti3O12/Pt was fabricated.
Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by sol–gel method were studied. The electrical characteristics and dielectric properties of Bi4Ti3O12 films annealed at various temperatures at low-resistance and high-resistance states are described. Clear resistance switching of ILRS/IHRS>102 was observed with electric sweeps in samples that were annealed at various temperatures. The conduction mechanisms at the low resistance state (LRS) and high resistance state (HRS) are Ohmic and Space-Charge-Limited-Current (SCLC) conduction, respectively. A single phase was formed when a Bi4Ti3O12 sample was annealed at 550°C. Optimal condition could be obtained when annealed at 600°C. |
| doi_str_mv | 10.1016/j.mee.2013.06.016 |
| format | Article |
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•Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent RRAM device with a structure of Ag/Bi4Ti3O12/Pt was fabricated.
Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by sol–gel method were studied. The electrical characteristics and dielectric properties of Bi4Ti3O12 films annealed at various temperatures at low-resistance and high-resistance states are described. Clear resistance switching of ILRS/IHRS>102 was observed with electric sweeps in samples that were annealed at various temperatures. The conduction mechanisms at the low resistance state (LRS) and high resistance state (HRS) are Ohmic and Space-Charge-Limited-Current (SCLC) conduction, respectively. A single phase was formed when a Bi4Ti3O12 sample was annealed at 550°C. Optimal condition could be obtained when annealed at 600°C.</description><identifier>ISSN: 0167-9317</identifier><identifier>EISSN: 1873-5568</identifier><identifier>DOI: 10.1016/j.mee.2013.06.016</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Annealing ; Annealing temperature ; Bi4Ti3O12 ; Dielectric ; Dielectrics ; High resistance ; Microelectronics ; Optimization ; Resistance switching ; Sol gel process ; Sol–gel ; Switching ; Thin films</subject><ispartof>Microelectronic engineering, 2014-01, Vol.113, p.1-4</ispartof><rights>2013 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c330t-90225d4a88cb03e1d078af06b8c7f4269b40ecaafbad2cf32e129d43f3cacec3</citedby><cites>FETCH-LOGICAL-c330t-90225d4a88cb03e1d078af06b8c7f4269b40ecaafbad2cf32e129d43f3cacec3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.mee.2013.06.016$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,778,782,3539,27907,27908,45978</link.rule.ids></links><search><creatorcontrib>Sun, Bing-Cheng</creatorcontrib><creatorcontrib>Wang, Hua</creatorcontrib><creatorcontrib>Xu, Ji-Wen</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Zhou, Shang-Ju</creatorcontrib><creatorcontrib>Zhang, Yu-Pei</creatorcontrib><creatorcontrib>Li, Zhi-Da</creatorcontrib><title>Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films</title><title>Microelectronic engineering</title><description>Clear resistance switching with ILRS/IHRS>102 in Bi4Ti3O12 films annealed at 550°C–650°C was observed. [Display omitted]
•Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent RRAM device with a structure of Ag/Bi4Ti3O12/Pt was fabricated.
Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by sol–gel method were studied. The electrical characteristics and dielectric properties of Bi4Ti3O12 films annealed at various temperatures at low-resistance and high-resistance states are described. Clear resistance switching of ILRS/IHRS>102 was observed with electric sweeps in samples that were annealed at various temperatures. The conduction mechanisms at the low resistance state (LRS) and high resistance state (HRS) are Ohmic and Space-Charge-Limited-Current (SCLC) conduction, respectively. A single phase was formed when a Bi4Ti3O12 sample was annealed at 550°C. Optimal condition could be obtained when annealed at 600°C.</description><subject>Annealing</subject><subject>Annealing temperature</subject><subject>Bi4Ti3O12</subject><subject>Dielectric</subject><subject>Dielectrics</subject><subject>High resistance</subject><subject>Microelectronics</subject><subject>Optimization</subject><subject>Resistance switching</subject><subject>Sol gel process</subject><subject>Sol–gel</subject><subject>Switching</subject><subject>Thin films</subject><issn>0167-9317</issn><issn>1873-5568</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kLtOAzEQRS0EEiHwAXQuaXbxY5-igoiXFClNess7HhNH-wi2A-Lv8SrUVKO5umekOYTccpZzxqv7fT4g5oJxmbMqT8kZWfCmlllZVs05WaSkzlrJ60tyFcKepb1gzYKMz9YiRDpZqscRde_GDxpxOKDX8eiRTiP1GFyIegSk4dtF2M0dPRpqHPYJ9g4o7LTXENGnpoMw33tyxdbJDRc0JoJa1w_hmlxY3Qe8-ZtLsn153q7esvXm9X31uM5AShazlglRmkI3DXRMIjesbrRlVddAbQtRtV3BELS2nTYCrBTIRWsKaSVoQJBLcnc6e_DT5xFDVIMLgH2vR5yOQfFScialbKtU5acq-CkEj1YdvBu0_1GcqVmt2qukVs1qFatUShLzcGIwvfDl0KsADpMf43zyoczk_qF_AbDyg2g</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>Sun, Bing-Cheng</creator><creator>Wang, Hua</creator><creator>Xu, Ji-Wen</creator><creator>Yang, Ling</creator><creator>Zhou, Shang-Ju</creator><creator>Zhang, Yu-Pei</creator><creator>Li, Zhi-Da</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201401</creationdate><title>Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films</title><author>Sun, Bing-Cheng ; Wang, Hua ; Xu, Ji-Wen ; Yang, Ling ; Zhou, Shang-Ju ; Zhang, Yu-Pei ; Li, Zhi-Da</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c330t-90225d4a88cb03e1d078af06b8c7f4269b40ecaafbad2cf32e129d43f3cacec3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Annealing temperature</topic><topic>Bi4Ti3O12</topic><topic>Dielectric</topic><topic>Dielectrics</topic><topic>High resistance</topic><topic>Microelectronics</topic><topic>Optimization</topic><topic>Resistance switching</topic><topic>Sol gel process</topic><topic>Sol–gel</topic><topic>Switching</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Sun, Bing-Cheng</creatorcontrib><creatorcontrib>Wang, Hua</creatorcontrib><creatorcontrib>Xu, Ji-Wen</creatorcontrib><creatorcontrib>Yang, Ling</creatorcontrib><creatorcontrib>Zhou, Shang-Ju</creatorcontrib><creatorcontrib>Zhang, Yu-Pei</creatorcontrib><creatorcontrib>Li, Zhi-Da</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Microelectronic engineering</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sun, Bing-Cheng</au><au>Wang, Hua</au><au>Xu, Ji-Wen</au><au>Yang, Ling</au><au>Zhou, Shang-Ju</au><au>Zhang, Yu-Pei</au><au>Li, Zhi-Da</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films</atitle><jtitle>Microelectronic engineering</jtitle><date>2014-01</date><risdate>2014</risdate><volume>113</volume><spage>1</spage><epage>4</epage><pages>1-4</pages><issn>0167-9317</issn><eissn>1873-5568</eissn><abstract>Clear resistance switching with ILRS/IHRS>102 in Bi4Ti3O12 films annealed at 550°C–650°C was observed. [Display omitted]
•Bi4Ti3O12 films with large magnitude of ILRS/IHRS were brought forward.•Effects of annealing temperature on resistance switching behavior were investigated.•A new transparent RRAM device with a structure of Ag/Bi4Ti3O12/Pt was fabricated.
Nonvolatile of polycrystalline Bi4Ti3O12 thin films prepared by sol–gel method were studied. The electrical characteristics and dielectric properties of Bi4Ti3O12 films annealed at various temperatures at low-resistance and high-resistance states are described. Clear resistance switching of ILRS/IHRS>102 was observed with electric sweeps in samples that were annealed at various temperatures. The conduction mechanisms at the low resistance state (LRS) and high resistance state (HRS) are Ohmic and Space-Charge-Limited-Current (SCLC) conduction, respectively. A single phase was formed when a Bi4Ti3O12 sample was annealed at 550°C. Optimal condition could be obtained when annealed at 600°C.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.mee.2013.06.016</doi><tpages>4</tpages></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Annealing Annealing temperature Bi4Ti3O12 Dielectric Dielectrics High resistance Microelectronics Optimization Resistance switching Sol gel process Sol–gel Switching Thin films |
| title | Effect of annealing temperature on resistance switching and dielectric characteristics of Bi4Ti3O12 thin films |
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