Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV
Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the differe...
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Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2013-11, Vol.728, p.11-22 |
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container_title | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment |
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creator | Soti, G. Wauters, F. Breitenfeldt, M. Finlay, P. Kraev, I.S. Knecht, A. Porobić, T. Zákoucký, D. Severijns, N. |
description | Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to beta beta particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data. |
doi_str_mv | 10.1016/j.nima.2013.06.047 |
format | Article |
fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1531033006</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1531033006</sourcerecordid><originalsourceid>FETCH-LOGICAL-c316t-31e3da49254cd739568d3ef73919fbd38fba201e1004ebec915bc9bf3d29b6e33</originalsourceid><addsrcrecordid>eNotkDFPwzAQhT2ARCn8ASaPLAnnOEnjEVVQkIpgAFbLcc4hVWIH2xHqvyeh3PJOd--edB8hNwxSBqy8O6S2G1SaAeMplCnkmzOymhdVIgCyC3IZwgHmEptqRfo39Mb5QVmN1Bm6Q2VjTjtLQzdMvYqdbWnAodPONpOOztNR-djpHmmDEf8mHsPobMDlLH4hRYu-PVKvbIu0xt79UEZf8POKnBvVB7z-1zX5eHx43z4l-9fd8_Z-n2jOyphwhrxRuciKXDcbLoqyajiauWPC1A2vTK3m75AB5FijFqyotagNbzJRl8j5mtyeckfvvicMUQ5d0Nj3yqKbgmQFZ8A5QDlbs5NVexeCRyNHP9PzR8lALjjlQS445YJTQilnnPwXl3JtXw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1531033006</pqid></control><display><type>article</type><title>Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Soti, G. ; Wauters, F. ; Breitenfeldt, M. ; Finlay, P. ; Kraev, I.S. ; Knecht, A. ; Porobić, T. ; Zákoucký, D. ; Severijns, N.</creator><creatorcontrib>Soti, G. ; Wauters, F. ; Breitenfeldt, M. ; Finlay, P. ; Kraev, I.S. ; Knecht, A. ; Porobić, T. ; Zákoucký, D. ; Severijns, N.</creatorcontrib><description>Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to beta beta particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.</description><identifier>ISSN: 0168-9002</identifier><identifier>DOI: 10.1016/j.nima.2013.06.047</identifier><language>eng</language><subject>Accuracy ; Backscattering ; Computer simulation ; Detectors ; Energy (nuclear) ; Mathematical models ; Semiconductors ; Silicon</subject><ispartof>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2013-11, Vol.728, p.11-22</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-31e3da49254cd739568d3ef73919fbd38fba201e1004ebec915bc9bf3d29b6e33</citedby><cites>FETCH-LOGICAL-c316t-31e3da49254cd739568d3ef73919fbd38fba201e1004ebec915bc9bf3d29b6e33</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Soti, G.</creatorcontrib><creatorcontrib>Wauters, F.</creatorcontrib><creatorcontrib>Breitenfeldt, M.</creatorcontrib><creatorcontrib>Finlay, P.</creatorcontrib><creatorcontrib>Kraev, I.S.</creatorcontrib><creatorcontrib>Knecht, A.</creatorcontrib><creatorcontrib>Porobić, T.</creatorcontrib><creatorcontrib>Zákoucký, D.</creatorcontrib><creatorcontrib>Severijns, N.</creatorcontrib><title>Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV</title><title>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment</title><description>Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to beta beta particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.</description><subject>Accuracy</subject><subject>Backscattering</subject><subject>Computer simulation</subject><subject>Detectors</subject><subject>Energy (nuclear)</subject><subject>Mathematical models</subject><subject>Semiconductors</subject><subject>Silicon</subject><issn>0168-9002</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNotkDFPwzAQhT2ARCn8ASaPLAnnOEnjEVVQkIpgAFbLcc4hVWIH2xHqvyeh3PJOd--edB8hNwxSBqy8O6S2G1SaAeMplCnkmzOymhdVIgCyC3IZwgHmEptqRfo39Mb5QVmN1Bm6Q2VjTjtLQzdMvYqdbWnAodPONpOOztNR-djpHmmDEf8mHsPobMDlLH4hRYu-PVKvbIu0xt79UEZf8POKnBvVB7z-1zX5eHx43z4l-9fd8_Z-n2jOyphwhrxRuciKXDcbLoqyajiauWPC1A2vTK3m75AB5FijFqyotagNbzJRl8j5mtyeckfvvicMUQ5d0Nj3yqKbgmQFZ8A5QDlbs5NVexeCRyNHP9PzR8lALjjlQS445YJTQilnnPwXl3JtXw</recordid><startdate>20131101</startdate><enddate>20131101</enddate><creator>Soti, G.</creator><creator>Wauters, F.</creator><creator>Breitenfeldt, M.</creator><creator>Finlay, P.</creator><creator>Kraev, I.S.</creator><creator>Knecht, A.</creator><creator>Porobić, T.</creator><creator>Zákoucký, D.</creator><creator>Severijns, N.</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope></search><sort><creationdate>20131101</creationdate><title>Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV</title><author>Soti, G. ; Wauters, F. ; Breitenfeldt, M. ; Finlay, P. ; Kraev, I.S. ; Knecht, A. ; Porobić, T. ; Zákoucký, D. ; Severijns, N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-31e3da49254cd739568d3ef73919fbd38fba201e1004ebec915bc9bf3d29b6e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Accuracy</topic><topic>Backscattering</topic><topic>Computer simulation</topic><topic>Detectors</topic><topic>Energy (nuclear)</topic><topic>Mathematical models</topic><topic>Semiconductors</topic><topic>Silicon</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Soti, G.</creatorcontrib><creatorcontrib>Wauters, F.</creatorcontrib><creatorcontrib>Breitenfeldt, M.</creatorcontrib><creatorcontrib>Finlay, P.</creatorcontrib><creatorcontrib>Kraev, I.S.</creatorcontrib><creatorcontrib>Knecht, A.</creatorcontrib><creatorcontrib>Porobić, T.</creatorcontrib><creatorcontrib>Zákoucký, D.</creatorcontrib><creatorcontrib>Severijns, N.</creatorcontrib><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Soti, G.</au><au>Wauters, F.</au><au>Breitenfeldt, M.</au><au>Finlay, P.</au><au>Kraev, I.S.</au><au>Knecht, A.</au><au>Porobić, T.</au><au>Zákoucký, D.</au><au>Severijns, N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV</atitle><jtitle>Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment</jtitle><date>2013-11-01</date><risdate>2013</risdate><volume>728</volume><spage>11</spage><epage>22</epage><pages>11-22</pages><issn>0168-9002</issn><abstract>Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to beta beta particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.</abstract><doi>10.1016/j.nima.2013.06.047</doi><tpages>12</tpages></addata></record> |
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source | Elsevier ScienceDirect Journals Complete |
subjects | Accuracy Backscattering Computer simulation Detectors Energy (nuclear) Mathematical models Semiconductors Silicon |
title | Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV |
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