Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV

Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the differe...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2013-11, Vol.728, p.11-22
Hauptverfasser: Soti, G., Wauters, F., Breitenfeldt, M., Finlay, P., Kraev, I.S., Knecht, A., Porobić, T., Zákoucký, D., Severijns, N.
Format: Artikel
Sprache:eng
Schlagworte:
Accuracy
Backscattering
Computer simulation
Detectors
Energy (nuclear)
Mathematical models
Semiconductors
Silicon
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Zusammenfassung:Geant4 simulations play a crucial role in the analysis and interpretation of experiments providing low energy precision tests of the Standard Model. This paper focuses on the accuracy of the description of the electron processes in the energy range between 100 and 1000 keV. The effect of the different simulation parameters and multiple scattering models on the backscattering coefficients is investigated. Simulations of the response of HPGe and passivated implanted planar Si detectors to beta beta particles are compared to experimental results. An overall good agreement is found between Geant4 simulations and experimental data.
ISSN:0168-9002
DOI:10.1016/j.nima.2013.06.047