Performance estimation of InSb compound semiconductor detectors as a function of active area using alpha particles

Performance estimation of InSb compound semiconductor detectors as a function of active area using alpha particles

We have fabricated radiation detectors using p-type indium antimonide crystals grown by liquid phase epitaxy (LPE). The current–voltage curves, energy spectra of alpha particles, and energy resolutions obtained using two different InSb detectors were compared. The alpha-particle energy resolutions w...

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Veröffentlicht in:Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2014-02, Vol.737, p.1-4
Hauptverfasser: Sato, Yuki, Morita, Yasunari, Kanno, Ikuo
Format: Artikel
Sprache:eng
Schlagworte:
Accelerators
Alpha particles
Alpha rays
Detectors
Energy resolution
Indium antimonides
InSb detector
Intermetallics
Liquid phase epitaxy
Semiconductors
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Zusammenfassung:We have fabricated radiation detectors using p-type indium antimonide crystals grown by liquid phase epitaxy (LPE). The current–voltage curves, energy spectra of alpha particles, and energy resolutions obtained using two different InSb detectors were compared. The alpha-particle energy resolutions were 1.8% at 24 and 42K, using the LPE–InSb detector with wafer size of 1.0×1.5mm2.
ISSN:0168-9002
1872-9576
DOI:10.1016/j.nima.2013.11.037