Optimization of CMOS pixel sensors for high performance vertexing and tracking
CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with...
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Veröffentlicht in: | Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment Accelerators, spectrometers, detectors and associated equipment, 2013-12, Vol.732, p.480-483 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | CMOS Pixel Sensors tend to become relevant for a growing spectrum of charged particle detection instruments. This comes mainly from their high granularity and low material budget. However, several potential applications require a higher read-out speed and radiation tolerance than those achieved with the available devices based on a 0.35μm feature size technology. This paper shows preliminary test results of new prototype sensors manufactured in a 0.18μm process based on a high resistivity epitaxial layer of sizeable thickness. Grounded on these observed performances, we discuss a development strategy over the coming years to reach a full scale sensor matching the specifications of the upgraded version of the Inner Tracking System (ITS) of the ALICE experiment at CERN, for which a sensitive area of up to ∼10m2 may be equipped with pixel sensors. |
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ISSN: | 0168-9002 1872-9576 |
DOI: | 10.1016/j.nima.2013.06.101 |