Evidence of lateral electric fields in c -plane III-V nitrides via terahertz emission

We observe terahertz (THz) emission from c ‐plane InN and In0.15Ga0.85N films on GaN templates due to surface‐normal transport with a strong anomalous in‐plane transport component. Analysis of the rotational dependence of the THz emission associated with this in‐plane transport indicates that an electric field exists along the [1‐100] m‐axis correlated with the underlying template miscut. Calculations show that the field is correlated with strain‐induced polarization fields at the heterointerface related to step‐like charges at interfaces of the epilayers and the miscut templates. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)