Effect of annealing on structural and optical properties of diamond-like nanocomposite thin films

The annealing effect on structural and optical properties of the Diamond-like Nanocomposite (DLN) thin film deposited on glass substrate by Plasma Assisted Chemical Vapor Deposition (PACVD) method has been investigated. The films were annealed at temperature ranging from 300 to 600 °C, with 100 °C i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2014-03, Vol.114 (3), p.965-972
Hauptverfasser: Jana, Sukhendu, Das, Sayan, De, Debasish, Gangopadhyay, Utpal, Ghosh, Prajit, Mondal, Anup
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The annealing effect on structural and optical properties of the Diamond-like Nanocomposite (DLN) thin film deposited on glass substrate by Plasma Assisted Chemical Vapor Deposition (PACVD) method has been investigated. The films were annealed at temperature ranging from 300 to 600 °C, with 100 °C interval for 9 minutes by rapid thermal process (RTP) under vacuum. The structural changes of the annealed films have been studied using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Scanning Electron Microscope (SEM), and optical parameters have been determined using transmittance and reflectance spectra in UV-UIS-NIR range. The result shows that the refractive index increases gradually from 1.79 to 2.84 with annealing temperature due to out-diffusion of H by breaking Si–H and C–H bond leads to Si–C bond, i.e. more cross linking structure. In higher temperature range, graphitization also enhanced the refractive index. However, the optical band gap at up to 400 °C initially increases from 3.05 to 3.20 eV and then decreases due to graphitization. The film has a great potential to be used as anti-reflection coating (ARC) on silicon-based solar cell.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-013-8044-1