Realization of Na-doped p-type non-polar a-plane Zn1−xCdxO films by pulsed laser deposition
•The Cd content in Zn1−xCdxO films was adjusted via controlling substrate temperature.•Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity.•XPS spectra confirm that Na incorporated in the films exists as NaZn.•Room-temperature PL measurements exhibit redshift of the NBE emission by alloyi...
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| Veröffentlicht in: | Journal of alloys and compounds 2014-01, Vol.584, p.466-470 |
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| container_title | Journal of alloys and compounds |
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| creator | Li, Y. Pan, X.H. Jiang, J. He, H.P. Huang, J.Y. Ye, C.L. Ye, Z.Z. |
| description | •The Cd content in Zn1−xCdxO films was adjusted via controlling substrate temperature.•Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity.•XPS spectra confirm that Na incorporated in the films exists as NaZn.•Room-temperature PL measurements exhibit redshift of the NBE emission by alloying Cd.
Na-doped non-polar Zn1−xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The Cd content in the Zn1−xCdxO thin films was adjusted via controlling substrate temperature. Based on the X-ray diffraction analysis, Na-doped Zn1−xCdxO films with Cd content below 5.3at.% exhibit unique non-polar 〈112¯0〉 orientation, while the films with Cd content above 5.3at.% present 〈0001〉 and 〈112¯0〉 mixed orientations. With an effective incorporation of Na, Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity, as confirmed by rectification behavior of n-ZnO/p-Zn0.947Cd0.053O:Na homojunction. An optimized result with a resistivity of 67.43Ωcm, Hall mobility of 0.28cm2/Vs, and hole concentration of 3.31×1017 cm−3 is achieved, and electrically stable over several months. The chemical states of Na were analyzed by X-ray photoelectron spectro scopy. Room-temperature photoluminescence measurements exhibit redshift of the near-band-edge emission by alloying Cd. |
| doi_str_mv | 10.1016/j.jallcom.2013.09.071 |
| format | Article |
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Na-doped non-polar Zn1−xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The Cd content in the Zn1−xCdxO thin films was adjusted via controlling substrate temperature. Based on the X-ray diffraction analysis, Na-doped Zn1−xCdxO films with Cd content below 5.3at.% exhibit unique non-polar 〈112¯0〉 orientation, while the films with Cd content above 5.3at.% present 〈0001〉 and 〈112¯0〉 mixed orientations. With an effective incorporation of Na, Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity, as confirmed by rectification behavior of n-ZnO/p-Zn0.947Cd0.053O:Na homojunction. An optimized result with a resistivity of 67.43Ωcm, Hall mobility of 0.28cm2/Vs, and hole concentration of 3.31×1017 cm−3 is achieved, and electrically stable over several months. The chemical states of Na were analyzed by X-ray photoelectron spectro scopy. Room-temperature photoluminescence measurements exhibit redshift of the near-band-edge emission by alloying Cd.</description><identifier>ISSN: 0925-8388</identifier><identifier>EISSN: 1873-4669</identifier><identifier>DOI: 10.1016/j.jallcom.2013.09.071</identifier><language>eng</language><publisher>Kidlington: Elsevier B.V</publisher><subject>Alloys ; Cadmium ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Diffraction ; Electrical resistivity ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Na-doped ; Non-polar ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of specific thin films ; Orientation ; P-type ; Photoluminescence ; Physics ; Pulsed laser deposition ; Thin films ; Zn1−xCdxO thin films</subject><ispartof>Journal of alloys and compounds, 2014-01, Vol.584, p.466-470</ispartof><rights>2013 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.jallcom.2013.09.071$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28264621$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Li, Y.</creatorcontrib><creatorcontrib>Pan, X.H.</creatorcontrib><creatorcontrib>Jiang, J.</creatorcontrib><creatorcontrib>He, H.P.</creatorcontrib><creatorcontrib>Huang, J.Y.</creatorcontrib><creatorcontrib>Ye, C.L.</creatorcontrib><creatorcontrib>Ye, Z.Z.</creatorcontrib><title>Realization of Na-doped p-type non-polar a-plane Zn1−xCdxO films by pulsed laser deposition</title><title>Journal of alloys and compounds</title><description>•The Cd content in Zn1−xCdxO films was adjusted via controlling substrate temperature.•Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity.•XPS spectra confirm that Na incorporated in the films exists as NaZn.•Room-temperature PL measurements exhibit redshift of the NBE emission by alloying Cd.
Na-doped non-polar Zn1−xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The Cd content in the Zn1−xCdxO thin films was adjusted via controlling substrate temperature. Based on the X-ray diffraction analysis, Na-doped Zn1−xCdxO films with Cd content below 5.3at.% exhibit unique non-polar 〈112¯0〉 orientation, while the films with Cd content above 5.3at.% present 〈0001〉 and 〈112¯0〉 mixed orientations. With an effective incorporation of Na, Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity, as confirmed by rectification behavior of n-ZnO/p-Zn0.947Cd0.053O:Na homojunction. An optimized result with a resistivity of 67.43Ωcm, Hall mobility of 0.28cm2/Vs, and hole concentration of 3.31×1017 cm−3 is achieved, and electrically stable over several months. The chemical states of Na were analyzed by X-ray photoelectron spectro scopy. Room-temperature photoluminescence measurements exhibit redshift of the near-band-edge emission by alloying Cd.</description><subject>Alloys</subject><subject>Cadmium</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Diffraction</subject><subject>Electrical resistivity</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Na-doped</subject><subject>Non-polar</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of specific thin films</subject><subject>Orientation</subject><subject>P-type</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Pulsed laser deposition</subject><subject>Thin films</subject><subject>Zn1−xCdxO thin films</subject><issn>0925-8388</issn><issn>1873-4669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNotkc1qGzEUhUVooa7bRwhoE8hGE_3M6GcVgmmaQGigJJtCEbJ0B2TkkTIaF7tP0HUesU-SMfHqLu53Dgc-hM4ZbRhl8mrTbFxKPm8bTploqGmoYmdowbQSpJXSfEALanhHtND6E_pc64ZSyoxgC_T7J7gU_7op5gHnHv9wJOQCARcyHQrgIQ-k5ORG7EhJbgD8a2D__73uV2H_iPuYthWvD7jsUp1DyVUYcYCSazw2fkEfezd_vp7uEj3ffnta3ZGHx-_3q5sHAly1E5EMRODKO7VWfK2lBu6F5IZ67wVw7UQnRK-M872WxpiwBs8VC7JvO937VizR5XtvGfPLDupkt7F6SMfBeVct6wSjtJNUzejFCXXVu9SPbvCx2jLGrRsPlmsuW8nZzF2_czDv_hNhtNVHGDyEOIKfbMjRMmqPAuzGngTYowBLjZ0FiDdFK308</recordid><startdate>20140125</startdate><enddate>20140125</enddate><creator>Li, Y.</creator><creator>Pan, X.H.</creator><creator>Jiang, J.</creator><creator>He, H.P.</creator><creator>Huang, J.Y.</creator><creator>Ye, C.L.</creator><creator>Ye, Z.Z.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>7SP</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140125</creationdate><title>Realization of Na-doped p-type non-polar a-plane Zn1−xCdxO films by pulsed laser deposition</title><author>Li, Y. ; Pan, X.H. ; Jiang, J. ; He, H.P. ; Huang, J.Y. ; Ye, C.L. ; Ye, Z.Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e274t-61e3d27ca7b72b868e2c36290ccc3e28a3533f79acf86999dbec271d6f458fc43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Alloys</topic><topic>Cadmium</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Diffraction</topic><topic>Electrical resistivity</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Na-doped</topic><topic>Non-polar</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of specific thin films</topic><topic>Orientation</topic><topic>P-type</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Pulsed laser deposition</topic><topic>Thin films</topic><topic>Zn1−xCdxO thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Y.</creatorcontrib><creatorcontrib>Pan, X.H.</creatorcontrib><creatorcontrib>Jiang, J.</creatorcontrib><creatorcontrib>He, H.P.</creatorcontrib><creatorcontrib>Huang, J.Y.</creatorcontrib><creatorcontrib>Ye, C.L.</creatorcontrib><creatorcontrib>Ye, Z.Z.</creatorcontrib><collection>Pascal-Francis</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of alloys and compounds</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Y.</au><au>Pan, X.H.</au><au>Jiang, J.</au><au>He, H.P.</au><au>Huang, J.Y.</au><au>Ye, C.L.</au><au>Ye, Z.Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Realization of Na-doped p-type non-polar a-plane Zn1−xCdxO films by pulsed laser deposition</atitle><jtitle>Journal of alloys and compounds</jtitle><date>2014-01-25</date><risdate>2014</risdate><volume>584</volume><spage>466</spage><epage>470</epage><pages>466-470</pages><issn>0925-8388</issn><eissn>1873-4669</eissn><abstract>•The Cd content in Zn1−xCdxO films was adjusted via controlling substrate temperature.•Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity.•XPS spectra confirm that Na incorporated in the films exists as NaZn.•Room-temperature PL measurements exhibit redshift of the NBE emission by alloying Cd.
Na-doped non-polar Zn1−xCdxO thin films with different Cd content were grown on r-plane sapphire substrates by pulsed laser deposition. The Cd content in the Zn1−xCdxO thin films was adjusted via controlling substrate temperature. Based on the X-ray diffraction analysis, Na-doped Zn1−xCdxO films with Cd content below 5.3at.% exhibit unique non-polar 〈112¯0〉 orientation, while the films with Cd content above 5.3at.% present 〈0001〉 and 〈112¯0〉 mixed orientations. With an effective incorporation of Na, Na-doped non-polar Zn1−xCdxO films exhibit p-type conductivity, as confirmed by rectification behavior of n-ZnO/p-Zn0.947Cd0.053O:Na homojunction. An optimized result with a resistivity of 67.43Ωcm, Hall mobility of 0.28cm2/Vs, and hole concentration of 3.31×1017 cm−3 is achieved, and electrically stable over several months. The chemical states of Na were analyzed by X-ray photoelectron spectro scopy. Room-temperature photoluminescence measurements exhibit redshift of the near-band-edge emission by alloying Cd.</abstract><cop>Kidlington</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jallcom.2013.09.071</doi><tpages>5</tpages></addata></record> |
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| subjects | Alloys Cadmium Condensed matter: electronic structure, electrical, magnetic, and optical properties Diffraction Electrical resistivity Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Na-doped Non-polar Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of specific thin films Orientation P-type Photoluminescence Physics Pulsed laser deposition Thin films Zn1−xCdxO thin films |
| title | Realization of Na-doped p-type non-polar a-plane Zn1−xCdxO films by pulsed laser deposition |
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