Bulk crystal SiC blue LED with p–n homojunction structure fabricated by dressed-photon-phonon–assisted annealing

To fabricate a high-efficiency light emitting diode using indirect-transition-type bulk crystal SiC having a p–n homojunction structure, annealing was performed using stimulated emission via dressed photons generated at the inhomogeneous domain boundaries of Al dopant sites. This device emitted electroluminescence (EL) due to a two-step transition process via dressed-photon–phonons generated at the inhomogeneous domain boundaries of the Al dopant sites. The EL emission peak wavelength was 480–515 nm when the device was driven by a direct current and 390 nm when driven by a pulsed current. The external quantum efficiency of the EL emission was 1 %, and the internal quantum efficiency was as high as 10 %.