Fabrication of a bulk silicon p–n homojunction-structured light-emitting diode showing visible electroluminescence at room temperature

We have developed a novel dressed-photon-assisted annealing process, in which the distribution of dopant (boron) domains is modified in a self-organized manner based on the absorption of light having a photon energy higher than the band gap and subsequent stimulated emission. Using this process, we...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2014-04, Vol.115 (1), p.105-111
Hauptverfasser:	Tran, Minh Anh, Kawazoe, Tadashi, Ohtsu, Motoichi
Format:	Artikel
Sprache:	eng
Schlagworte:	Broadband Characterization and Evaluation of Materials Condensed Matter Physics Dopants Electroluminescence Emission Invited Paper Light-emitting diodes Machines Manufacturing Nanotechnology Optical and Electronic Materials Photons Physics Physics and Astronomy Processes Silicon Stimulated emission Surfaces and Interfaces Thin Films
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Zusammenfassung:	We have developed a novel dressed-photon-assisted annealing process, in which the distribution of dopant (boron) domains is modified in a self-organized manner based on the absorption of light having a photon energy higher than the band gap and subsequent stimulated emission. Using this process, we were able to fabricate a bulk silicon p–n homojunction-structured light-emitting diode that showed electroluminescence emission in the visible region at room temperature. A broadband spectrum with three emission peaks at 400 nm, 590 nm, and 620 nm was clearly observed.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-013-7907-9