Characterization of n-Ge/i-Ge/p-Si PIN photo-diode

A PIN photo-diode was fabricated from the phosphorus doped n-Ge/i-Ge/p-Si hetero-structure grown by rapid thermal chemical vapor deposition (RTCVD). The surface morphology of the n-Ge/i-Ge layer was found to be mirror like and the n-Ge/i-Ge layer was under a tensile strain of ~0.071%. The phosphorus...

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Veröffentlicht in:	Materials science in semiconductor processing 2014-06, Vol.22, p.37-43
Hauptverfasser:	Deok Yang, Hyeon, Kil, Yeon-Ho, Yang, Jong-Han, Kang, Sukill, Soo Jeong, Tae, Choi, Chel-Jong, Sung Kim, Taek, Shim, Kyu-Hwan
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Compound structure devices Cross-disciplinary physics: materials science rheology CVD Diodes Electronics Exact sciences and technology Germanium Hetero structure Materials science Methods of deposition of films and coatings film growth and epitaxy Optoelectronic devices Phosphorus Physics PIN photo-diode Saturation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Strain Surface roughness Wavelengths
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Zusammenfassung:	A PIN photo-diode was fabricated from the phosphorus doped n-Ge/i-Ge/p-Si hetero-structure grown by rapid thermal chemical vapor deposition (RTCVD). The surface morphology of the n-Ge/i-Ge layer was found to be mirror like and the n-Ge/i-Ge layer was under a tensile strain of ~0.071%. The phosphorus doping concentration and the RMS surface roughness were 2×1019cm−3 and 2.46nm, respectively. Current–voltage characteristics of the PIN photo-diode showed a forward saturation current density of 0.63A/cm2 at 2V and reverse-biased characteristics behaved similar to forward-biased characteristics of the diode. Roll-off in spectral response was observed at wavelengths greater than 1600nm which could be attributed to decreased absorption of Ge at room temperature.
ISSN:	1369-8001 1873-4081
DOI:	10.1016/j.mssp.2014.02.003