High efficiency silicon nitride grating coupler

High efficiency silicon nitride grating coupler

In this paper, we have designed, fabricated and characterized silicon nitride grating couplers with high efficiency at 1490 nm. The devices are fabricated using deep UV photolithography with resolution requirement of ∼500 nm. The grating coupler fabricated yields a peak coupling efficiency of −5.1 d...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Applied physics. A, Materials science & processing Materials science & processing, 2014-04, Vol.115 (1), p.79-82
Hauptverfasser: Zhang, Huijuan, Li, Chao, Tu, Xiaoguang, Luo, Xianshu, Yu, Mingbin, Lo, Patrick Guo-Qiang
Format: Artikel
Sprache:eng
Schlagworte:
Bandwidth
Characterization and Evaluation of Materials
Condensed Matter Physics
Devices
Invited Paper
Joining
Machines
Manufacturing
Materials science
Nanotechnology
Noise levels
Optical and Electronic Materials
Photolithography
Physics
Physics and Astronomy
Processes
Silicon nitride
Surfaces and Interfaces
Thin Films
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In this paper, we have designed, fabricated and characterized silicon nitride grating couplers with high efficiency at 1490 nm. The devices are fabricated using deep UV photolithography with resolution requirement of ∼500 nm. The grating coupler fabricated yields a peak coupling efficiency of −5.1 dB. The 1-dB bandwidth of the grating coupler is 60 nm.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-013-7954-2