Top electrode-dependent resistance switching behaviors of lanthanum-doped ZnO film memory devices

Lanthanum-doped ZnO (Zn 0.99 La 0.01 O) polycrystalline thin films were deposited on Pt/Ti/SiO 2 /Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar swit...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2014-03, Vol.114 (4), p.1377-1381
Hauptverfasser:	Xu, Dinglin, Xiong, Ying, Tang, Minghua, Zeng, Baiwen
Format:	Artikel
Sprache:	eng
Schlagworte:	Characterization and Evaluation of Materials Condensed Matter Physics Data storage Deposition Devices Electrodes Machines Manufacturing Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Platinum Processes Silver Surfaces and Interfaces Switching Thin Films Zinc oxide
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Beschreibung
Zusammenfassung:	Lanthanum-doped ZnO (Zn 0.99 La 0.01 O) polycrystalline thin films were deposited on Pt/Ti/SiO 2 /Si substrates by a chemical solution deposition method. Metal/La-doped ZnO/Pt sandwich structures were constructed by depositing different top electrodes (Ag and Pt). Unipolar switching and bipolar switching characteristics were investigated in Pt/La-doped ZnO/Pt and Ag/La-doped ZnO/Pt structures, respectively. Compared with the undoped devices (Pt/ZnO/Pt and Ag/ZnO/Pt), the La-doped devices exhibits superior resistive switching performances, such as narrow distribution of the resistive switching properties ( R ON , R OFF , V Set , and V Reset ), higher R OFF / R ON ratio and sharp switching transition.
ISSN:	0947-8396 1432-0630
DOI:	10.1007/s00339-013-7994-7