New nanoparticulate Gd1−xZrxFe1−yMnyO3 multiferroics: Synthesis, characterization and evaluation of electrical, dielectric and magnetic parameters

Nanosized GdFeO3 and its derivatives (Gd1−xZrxFe1−yMnyO3) synthesized by the normal micro-emulsion method exhibited a transition from antiferromagnetic behavior (GdFeO3) to ferromagnetic (Gd0.5Zr0.5Fe0.5Mn0.5O3) behavior. A significant decrease (∼about 6 folds) in electrical resistivity was also observed with the increased Zr–Mn contents. •Nanosized GdFeO3 and its derivatives (Gd1−xZrxFe1−yMnyO3) were synthesized by the normal micro-emulsion method.•As the Zr–Mn contents were increased the magnetic behavior was changed from antiferromagnetic to ferromagnetic.•Various electrical, dielectric and magnetic parameters are evaluated for nanosized Gd1−xZrxFe1−yMnyO3 particles.•A significant decrease (∼10 times) in electrical resistivity was observed with the increased Zr–Mn contents. Nanoparticles of Gd1−xZrxFe1−yMnyO3 (x, y=0–1) were synthesized by micro-emulsion method. The structural elucidation was accomplished by X-ray diffraction (XRD), Fourier transformed infrared spectroscopy, scanning electron microscopy (SEM) and thermogravimetric analysis that confirmed that all the nanoparticles are crystalline in orthorhombic phase. The particles size was found in the range 12–48nm (determined by XRD) and 33–48nm (estimated by SEM). The nanoparticles were then evaluated for electrical, dielectric and magnetic properties. The electrical resistivity studies exhibited the transition between metal to semiconductor in the range 340–380K, besides overall electrical resistivity was decreased with the increased Zr–Mn contents. The maximum electrical resistivity (80.95×108 Ω cm) was exhibited by Gd0.75Zr0.25Fe0.75Mn0.25O3 nanoparticles. The dielectric behavior was found to increase with increased Zr–Mn contents. The magnetic behavior confirmed the transition of magnetic order from antiferromagnetic to the ferromagnetic as the Zr and Mn contents were increased. The new structurally stable nanostructured multiferroics can be utilized for fabricating high frequency and magnetic recording devices.