Dielectric properties and energy-storage performances of (1−x)(Na0.5Bi0.5)TiO3–xSrTiO3 thick films prepared by screen printing technique

•Lead-free NBT–xST thick films were successfully fabricated by screen-printing method.•The maximum W of 2.7J/cm3 was obtained from the S30 thick films.•S30 exhibited good energy-storage stability from room temperature to 200°C.•The leakage current of the thick films was greatly reduced due to the addition of ST. In this work, (1−x)(Na0.5Bi0.5)TiO3–xSrTiO3 (abbreviated as NBT–xST, x=0%, 20%, 26%, 30%, 36%) thick films with 3wt% 3Bi2O3–2Li2O glass addition were successfully fabricated via a screen printing method. The dielectric properties and energy-storage performances were studied systematically. It was found that the dielectric constant of NBT–xST films decreased with ST content increasing and that the films exhibited relaxor behavior. The highest recoverable energy density of 2.7J/cm3 under 600kV/cm was achieved in the sample with 30mol% ST content, which also displayed good energy-storage stability in the temperature range from room temperature to 200°C. Simultaneously, the leakage current was greatly reduced due to the addition of ST.