Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy
InAs/GaAs quantum dots were grown by atmospheric pressure metalorganic vapor phase epitaxy in different technological conditions. A comparative study of influence of growth parameters on their optoelectronic properties was performed. It was found that the energy spectrum of InAs quantum dots grown i...
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| Veröffentlicht in: | Journal of luminescence 2014-03, Vol.147, p.59-62 |
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| container_title | Journal of luminescence |
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| creator | Levichev, S. Volkova, N.S. Gorshkov, A.P. Zdoroveishev, A.V. Vikhrova, O.V. Utsyna, E.V. Istomin, L.A. Zvonkov, B.N. |
| description | InAs/GaAs quantum dots were grown by atmospheric pressure metalorganic vapor phase epitaxy in different technological conditions. A comparative study of influence of growth parameters on their optoelectronic properties was performed. It was found that the energy spectrum of InAs quantum dots grown in the regime with increased interruption time between chemical reagents flows has low sensitivity to the modifications of GaAs cladding layer thickness and the presence of InGaAs quantum well.
•Quantum dots nanostructures were grown by metal organic vapor phase epitaxy.•Energy spectrum of nanostructures was found to be dependent strongly on growth modes.•Optical properties were investigated by photoluminescence and surface photovoltage.•The effect of elastic strains on energy spectra was studied applying an anodic oxidation of the cladding layer.•Dominating mechanisms of the emission were determined by temperature dependence of photosensitivity. |
| doi_str_mv | 10.1016/j.jlumin.2013.10.065 |
| format | Article |
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•Quantum dots nanostructures were grown by metal organic vapor phase epitaxy.•Energy spectrum of nanostructures was found to be dependent strongly on growth modes.•Optical properties were investigated by photoluminescence and surface photovoltage.•The effect of elastic strains on energy spectra was studied applying an anodic oxidation of the cladding layer.•Dominating mechanisms of the emission were determined by temperature dependence of photosensitivity.</description><identifier>ISSN: 0022-2313</identifier><identifier>EISSN: 1872-7883</identifier><identifier>DOI: 10.1016/j.jlumin.2013.10.065</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Emission of non-equilibrium carriers ; Gallium arsenide ; Gallium arsenides ; Indium arsenides ; Indium gallium arsenides ; Luminescence ; Metalorganic vapor phase epitaxy ; Optoelectronics ; Photoelectric spectroscopy ; Photoluminescence ; Quantum dots ; Temperature dependence</subject><ispartof>Journal of luminescence, 2014-03, Vol.147, p.59-62</ispartof><rights>2013 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-b39c9c96b98c50eb8d1e94ea421a3175c9bdd242e01dc07f8a3ef1d6e5236ac63</citedby><cites>FETCH-LOGICAL-c339t-b39c9c96b98c50eb8d1e94ea421a3175c9bdd242e01dc07f8a3ef1d6e5236ac63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022231313007187$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27903,27904,65309</link.rule.ids></links><search><creatorcontrib>Levichev, S.</creatorcontrib><creatorcontrib>Volkova, N.S.</creatorcontrib><creatorcontrib>Gorshkov, A.P.</creatorcontrib><creatorcontrib>Zdoroveishev, A.V.</creatorcontrib><creatorcontrib>Vikhrova, O.V.</creatorcontrib><creatorcontrib>Utsyna, E.V.</creatorcontrib><creatorcontrib>Istomin, L.A.</creatorcontrib><creatorcontrib>Zvonkov, B.N.</creatorcontrib><title>Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy</title><title>Journal of luminescence</title><description>InAs/GaAs quantum dots were grown by atmospheric pressure metalorganic vapor phase epitaxy in different technological conditions. A comparative study of influence of growth parameters on their optoelectronic properties was performed. It was found that the energy spectrum of InAs quantum dots grown in the regime with increased interruption time between chemical reagents flows has low sensitivity to the modifications of GaAs cladding layer thickness and the presence of InGaAs quantum well.
•Quantum dots nanostructures were grown by metal organic vapor phase epitaxy.•Energy spectrum of nanostructures was found to be dependent strongly on growth modes.•Optical properties were investigated by photoluminescence and surface photovoltage.•The effect of elastic strains on energy spectra was studied applying an anodic oxidation of the cladding layer.•Dominating mechanisms of the emission were determined by temperature dependence of photosensitivity.</description><subject>Emission of non-equilibrium carriers</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Indium arsenides</subject><subject>Indium gallium arsenides</subject><subject>Luminescence</subject><subject>Metalorganic vapor phase epitaxy</subject><subject>Optoelectronics</subject><subject>Photoelectric spectroscopy</subject><subject>Photoluminescence</subject><subject>Quantum dots</subject><subject>Temperature dependence</subject><issn>0022-2313</issn><issn>1872-7883</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KxDAUhYMoOI6-gYss3bSTn2mbboRh8A8G3Og6pMmtZmiTmqTqvIDPbcu4lru4cO85B86H0DUlOSW0XO3zfTf21uWMUD6dclIWJ2hBRcWySgh-ihaEMJYxTvk5uohxTwjhtagX6Gfr-0EFG73DvsV-SB460Cl4ZzUegh8gJAtxfj65TVw9qE3EH6Nyaeyx8Snit-C_HB6dgYCNbVsI4BLW3hmbrHcRNwfcQ1KdD29qTv1Ugw94eFcRMAw2qe_DJTprVRfh6m8v0ev93cv2Mds9PzxtN7tMc16nrOG1nqZsaqELAo0wFOo1qDWjitOq0HVjDFszINRoUrVCcWipKaFgvFS65Et0c8ydmn2MEJPsbdTQdcqBH6OkBSe14JWgk3R9lOrgYwzQyiHYXoWDpETO2OVeHrHLGft8nbBPttujDaYanxaCjNqC02BsmLhK4-3_Ab8wNpGv</recordid><startdate>20140301</startdate><enddate>20140301</enddate><creator>Levichev, S.</creator><creator>Volkova, N.S.</creator><creator>Gorshkov, A.P.</creator><creator>Zdoroveishev, A.V.</creator><creator>Vikhrova, O.V.</creator><creator>Utsyna, E.V.</creator><creator>Istomin, L.A.</creator><creator>Zvonkov, B.N.</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20140301</creationdate><title>Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy</title><author>Levichev, S. ; Volkova, N.S. ; Gorshkov, A.P. ; Zdoroveishev, A.V. ; Vikhrova, O.V. ; Utsyna, E.V. ; Istomin, L.A. ; Zvonkov, B.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-b39c9c96b98c50eb8d1e94ea421a3175c9bdd242e01dc07f8a3ef1d6e5236ac63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Emission of non-equilibrium carriers</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Indium arsenides</topic><topic>Indium gallium arsenides</topic><topic>Luminescence</topic><topic>Metalorganic vapor phase epitaxy</topic><topic>Optoelectronics</topic><topic>Photoelectric spectroscopy</topic><topic>Photoluminescence</topic><topic>Quantum dots</topic><topic>Temperature dependence</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Levichev, S.</creatorcontrib><creatorcontrib>Volkova, N.S.</creatorcontrib><creatorcontrib>Gorshkov, A.P.</creatorcontrib><creatorcontrib>Zdoroveishev, A.V.</creatorcontrib><creatorcontrib>Vikhrova, O.V.</creatorcontrib><creatorcontrib>Utsyna, E.V.</creatorcontrib><creatorcontrib>Istomin, L.A.</creatorcontrib><creatorcontrib>Zvonkov, B.N.</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Levichev, S.</au><au>Volkova, N.S.</au><au>Gorshkov, A.P.</au><au>Zdoroveishev, A.V.</au><au>Vikhrova, O.V.</au><au>Utsyna, E.V.</au><au>Istomin, L.A.</au><au>Zvonkov, B.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy</atitle><jtitle>Journal of luminescence</jtitle><date>2014-03-01</date><risdate>2014</risdate><volume>147</volume><spage>59</spage><epage>62</epage><pages>59-62</pages><issn>0022-2313</issn><eissn>1872-7883</eissn><abstract>InAs/GaAs quantum dots were grown by atmospheric pressure metalorganic vapor phase epitaxy in different technological conditions. A comparative study of influence of growth parameters on their optoelectronic properties was performed. It was found that the energy spectrum of InAs quantum dots grown in the regime with increased interruption time between chemical reagents flows has low sensitivity to the modifications of GaAs cladding layer thickness and the presence of InGaAs quantum well.
•Quantum dots nanostructures were grown by metal organic vapor phase epitaxy.•Energy spectrum of nanostructures was found to be dependent strongly on growth modes.•Optical properties were investigated by photoluminescence and surface photovoltage.•The effect of elastic strains on energy spectra was studied applying an anodic oxidation of the cladding layer.•Dominating mechanisms of the emission were determined by temperature dependence of photosensitivity.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.jlumin.2013.10.065</doi><tpages>4</tpages></addata></record> |
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| subjects | Emission of non-equilibrium carriers Gallium arsenide Gallium arsenides Indium arsenides Indium gallium arsenides Luminescence Metalorganic vapor phase epitaxy Optoelectronics Photoelectric spectroscopy Photoluminescence Quantum dots Temperature dependence |
| title | Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy |
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