Comparison of optoelectronic properties of InAs/GaAs quantum dots grown under different conditions by metalorganic vapor phase epitaxy

InAs/GaAs quantum dots were grown by atmospheric pressure metalorganic vapor phase epitaxy in different technological conditions. A comparative study of influence of growth parameters on their optoelectronic properties was performed. It was found that the energy spectrum of InAs quantum dots grown in the regime with increased interruption time between chemical reagents flows has low sensitivity to the modifications of GaAs cladding layer thickness and the presence of InGaAs quantum well. •Quantum dots nanostructures were grown by metal organic vapor phase epitaxy.•Energy spectrum of nanostructures was found to be dependent strongly on growth modes.•Optical properties were investigated by photoluminescence and surface photovoltage.•The effect of elastic strains on energy spectra was studied applying an anodic oxidation of the cladding layer.•Dominating mechanisms of the emission were determined by temperature dependence of photosensitivity.