Investigation of the Range Distribution of Yb Ions Implanted in SOI

The mean projected ranges and range straggling for energetic 200 500 keV Yb ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been foun...

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Veröffentlicht in:	Applied Mechanics and Materials 2014-01, Vol.488-489 (Materials Science, Civil Engineering and Architecture Science, Mechanical Engineering and Manufacturing Technology), p.269-272
Hauptverfasser:	Fu, Gang, Qin, Xi Feng, Shi, Shu Hua, Ma, Gui Jie
Format:	Artikel
Sprache:	eng
Schlagworte:	Accuracy Backscattering Mathematical analysis Monte Carlo methods Reinforced reaction injection molding Spectrum analysis
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Beschreibung
Zusammenfassung:	The mean projected ranges and range straggling for energetic 200 500 keV Yb ions implanted in silicon-on-insulator (SOI) were measured by means of Rutherford backscattering followed by spectrum analysis. The measured values are compared with Monte Carlo code (SRIM2012) calculations. It has been found that the measured values of the mean projected range are good agreement with the SRIM calculated values; for the range straggling , the difference between the experiment data and the calculated results is much higher than that of .
ISSN:	1660-9336 1662-7482 1662-7482
DOI:	10.4028/www.scientific.net/AMM.488-489.269