Inducing a Lifshitz transition by extrinsic doping of surface bands in the topological crystalline insulator Pb1-xSnxSe

The narrow gap semiconductor Pb1-xSnxSe was investigated for topologically protected surface states in its rocksalt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones, eccentric about...

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Veröffentlicht in:Physical review letters 2014-04, Vol.112 (14), p.146403-146403
Hauptverfasser: Pletikosić, I, Gu, G D, Valla, T
Format: Artikel
Sprache:eng
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Zusammenfassung:The narrow gap semiconductor Pb1-xSnxSe was investigated for topologically protected surface states in its rocksalt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones, eccentric about the time-reversal invariant point X¯ of the surface Brillouin zone for all but the x=0 sample. Adsorption of alkalies gradually filled the surface bands with electrons, driving the x>0 topological crystalline insulator systems through Lifshitz transitions, and from a holelike to electronlike Fermi surface. The electron-doped bands in x>0 samples exhibited the full configuration of the Dirac cones, also confirming electron-hole symmetry of the surface bands.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.112.146403