Inducing a Lifshitz transition by extrinsic doping of surface bands in the topological crystalline insulator Pb1-xSnxSe
The narrow gap semiconductor Pb1-xSnxSe was investigated for topologically protected surface states in its rocksalt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones, eccentric about...
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Veröffentlicht in: | Physical review letters 2014-04, Vol.112 (14), p.146403-146403 |
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Hauptverfasser: | , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | The narrow gap semiconductor Pb1-xSnxSe was investigated for topologically protected surface states in its rocksalt structural phase for x=0.45, 0.23, 0.15, and 0. Angle-resolved photoelectron spectroscopy of intrinsically p-doped samples showed a clear indication of two Dirac cones, eccentric about the time-reversal invariant point X¯ of the surface Brillouin zone for all but the x=0 sample. Adsorption of alkalies gradually filled the surface bands with electrons, driving the x>0 topological crystalline insulator systems through Lifshitz transitions, and from a holelike to electronlike Fermi surface. The electron-doped bands in x>0 samples exhibited the full configuration of the Dirac cones, also confirming electron-hole symmetry of the surface bands. |
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ISSN: | 1079-7114 |
DOI: | 10.1103/PhysRevLett.112.146403 |