Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

Dual doping‐driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field‐effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4‐TCNQ and NH2‐functionalized self‐assemble...

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Veröffentlicht in:	Advanced materials (Weinheim) 2012-01, Vol.24 (3), p.407-411
Hauptverfasser:	Park, Jaesung, Jo, Sae Byeok, Yu, Young-Jun, Kim, Youngsoo, Yang, Jae Won, Lee, Wi Hyoung, Kim, Hyun Ho, Hong, Byung Hee, Kim, Philip, Cho, Kilwon, Kim, Kwang S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amines - chemistry bandgap opening bilayer graphene Electric Conductivity field-effect transistors Graphite - chemistry molecular doping Oxides - chemistry self-assembled monolayers Silicon - chemistry Transistors, Electronic
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Dual doping‐driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field‐effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4‐TCNQ and NH2‐functionalized self‐assembled monolayers (SAMs)) even in a single‐gate device structure.
ISSN:	0935-9648 1521-4095
DOI:	10.1002/adma.201103411