Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method
•B-doped ZnO thin films were grown on quartz substrate by sol–gel dip-coating method.•The thickness of the thin films decreased with increasing concentration of B in the thin films.•The effects of B doping on optical and electrical properties of the ZnO thin films were investigated. Sol–gel dip-coat...
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| Veröffentlicht in: | Optical materials 2013-10, Vol.35 (12), p.2418-2424 |
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| creator | Kim, Soaram Yoon, Hyunsik Kim, Do Yeob Kim, Sung-O Leem, Jae-Young |
| description | •B-doped ZnO thin films were grown on quartz substrate by sol–gel dip-coating method.•The thickness of the thin films decreased with increasing concentration of B in the thin films.•The effects of B doping on optical and electrical properties of the ZnO thin films were investigated.
Sol–gel dip-coating was used to grow ZnO thin films doped with various concentrations of B ranging from 0 to 2.5at.% on quartz substrates. The effects of B doping on the absorption coefficient (α), optical band gap (Eg), Urbach energy (EU), refractive index (n), refractive index at infinite wavelength (n∞), extinction coefficient (k), single-oscillator energy (Eo), dispersion energy (Ed), average oscillator strength (So), average oscillator wavelength (λo), moments M−1 and M−3, dielectric constant (ε), optical conductivity (σ), and electrical resistivity (ρ) of the BZO thin films were investigated. The transmittance spectra of the ZnO and BZO thin films show that the transmittance of the BZO thin films was significantly higher than that of the ZnO thin films in the visible region of the spectrum and that the absorption edge of the BZO thin films was blue-shifted. The BZO thin films exhibited higher Eg, EU, and Eo and lower Ed, λo, M−1 and M−3 moments, So, n∞, and ρ than the ZnO thin films. |
| doi_str_mv | 10.1016/j.optmat.2013.06.048 |
| format | Article |
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Sol–gel dip-coating was used to grow ZnO thin films doped with various concentrations of B ranging from 0 to 2.5at.% on quartz substrates. The effects of B doping on the absorption coefficient (α), optical band gap (Eg), Urbach energy (EU), refractive index (n), refractive index at infinite wavelength (n∞), extinction coefficient (k), single-oscillator energy (Eo), dispersion energy (Ed), average oscillator strength (So), average oscillator wavelength (λo), moments M−1 and M−3, dielectric constant (ε), optical conductivity (σ), and electrical resistivity (ρ) of the BZO thin films were investigated. The transmittance spectra of the ZnO and BZO thin films show that the transmittance of the BZO thin films was significantly higher than that of the ZnO thin films in the visible region of the spectrum and that the absorption edge of the BZO thin films was blue-shifted. The BZO thin films exhibited higher Eg, EU, and Eo and lower Ed, λo, M−1 and M−3 moments, So, n∞, and ρ than the ZnO thin films.</description><identifier>ISSN: 0925-3467</identifier><identifier>EISSN: 1873-1252</identifier><identifier>DOI: 10.1016/j.optmat.2013.06.048</identifier><language>eng</language><publisher>Oxford: Elsevier B.V</publisher><subject>B-doped ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Dip coatings ; Electrical resistivity ; Exact sciences and technology ; Fundamental areas of phenomenology (including applications) ; Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity ; Optical materials ; Optical properties ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of bulk materials and thin films ; Optics ; Physics ; Refractivity ; Sol gel process ; Sol–gel ; Thin films ; Transmittance ; Wavelengths ; Zinc oxide</subject><ispartof>Optical materials, 2013-10, Vol.35 (12), p.2418-2424</ispartof><rights>2013 Elsevier B.V.</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-a93a7544843581a0777f5dae1fae3989c05d579c0ce7e3d2a4a00d4abade42e63</citedby><cites>FETCH-LOGICAL-c369t-a93a7544843581a0777f5dae1fae3989c05d579c0ce7e3d2a4a00d4abade42e63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925346713003601$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=27830997$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kim, Soaram</creatorcontrib><creatorcontrib>Yoon, Hyunsik</creatorcontrib><creatorcontrib>Kim, Do Yeob</creatorcontrib><creatorcontrib>Kim, Sung-O</creatorcontrib><creatorcontrib>Leem, Jae-Young</creatorcontrib><title>Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method</title><title>Optical materials</title><description>•B-doped ZnO thin films were grown on quartz substrate by sol–gel dip-coating method.•The thickness of the thin films decreased with increasing concentration of B in the thin films.•The effects of B doping on optical and electrical properties of the ZnO thin films were investigated.
Sol–gel dip-coating was used to grow ZnO thin films doped with various concentrations of B ranging from 0 to 2.5at.% on quartz substrates. The effects of B doping on the absorption coefficient (α), optical band gap (Eg), Urbach energy (EU), refractive index (n), refractive index at infinite wavelength (n∞), extinction coefficient (k), single-oscillator energy (Eo), dispersion energy (Ed), average oscillator strength (So), average oscillator wavelength (λo), moments M−1 and M−3, dielectric constant (ε), optical conductivity (σ), and electrical resistivity (ρ) of the BZO thin films were investigated. The transmittance spectra of the ZnO and BZO thin films show that the transmittance of the BZO thin films was significantly higher than that of the ZnO thin films in the visible region of the spectrum and that the absorption edge of the BZO thin films was blue-shifted. The BZO thin films exhibited higher Eg, EU, and Eo and lower Ed, λo, M−1 and M−3 moments, So, n∞, and ρ than the ZnO thin films.</description><subject>B-doped</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Dip coatings</subject><subject>Electrical resistivity</subject><subject>Exact sciences and technology</subject><subject>Fundamental areas of phenomenology (including applications)</subject><subject>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</subject><subject>Optical materials</subject><subject>Optical properties</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of bulk materials and thin films</subject><subject>Optics</subject><subject>Physics</subject><subject>Refractivity</subject><subject>Sol gel process</subject><subject>Sol–gel</subject><subject>Thin films</subject><subject>Transmittance</subject><subject>Wavelengths</subject><subject>Zinc oxide</subject><issn>0925-3467</issn><issn>1873-1252</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kLFuFDEQhi0EEkfCG1C4QaLZxV7b690GCUWEIEW6Bhoaa86evfi0a29sJ-g63oE35Eni5CJKqinmm_n1f4S846zljPcfD21cywKl7RgXLetbJocXZMMHLRreqe4l2bCxU42QvX5N3uR8YIx1qu835Ha7Fm9hpmuKK6biMVMIjuKMtqSnTcLsc_H3vhxpnOguphgaV2lHf4YtLTc-0MnPS6b7FH8FujvSHOe_v__scabOr42NUHzY0wXLTXTn5NUEc8a3z_OM_Lj88v3iqrnefv128fm6saIfSwOjAK2kHKRQAwemtZ6UA-QToBiH0TLllK7DokbhOpDAmJOwA4eyw16ckQ-nv7XZ7R3mYhafLc4zBIx32XDFhRzZqFRF5Qm1KeaccDJr8guko-HMPBo2B3MybB4NG9abarievX9OgFxFTQmC9fnfbacHwcZRV-7TicNa995jMtl6DBadT9WycdH_P-gBbuiWpA</recordid><startdate>20131001</startdate><enddate>20131001</enddate><creator>Kim, Soaram</creator><creator>Yoon, Hyunsik</creator><creator>Kim, Do Yeob</creator><creator>Kim, Sung-O</creator><creator>Leem, Jae-Young</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20131001</creationdate><title>Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method</title><author>Kim, Soaram ; Yoon, Hyunsik ; Kim, Do Yeob ; Kim, Sung-O ; Leem, Jae-Young</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-a93a7544843581a0777f5dae1fae3989c05d579c0ce7e3d2a4a00d4abade42e63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>B-doped</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Dip coatings</topic><topic>Electrical resistivity</topic><topic>Exact sciences and technology</topic><topic>Fundamental areas of phenomenology (including applications)</topic><topic>Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity</topic><topic>Optical materials</topic><topic>Optical properties</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of bulk materials and thin films</topic><topic>Optics</topic><topic>Physics</topic><topic>Refractivity</topic><topic>Sol gel process</topic><topic>Sol–gel</topic><topic>Thin films</topic><topic>Transmittance</topic><topic>Wavelengths</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Soaram</creatorcontrib><creatorcontrib>Yoon, Hyunsik</creatorcontrib><creatorcontrib>Kim, Do Yeob</creatorcontrib><creatorcontrib>Kim, Sung-O</creatorcontrib><creatorcontrib>Leem, Jae-Young</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Optical materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Soaram</au><au>Yoon, Hyunsik</au><au>Kim, Do Yeob</au><au>Kim, Sung-O</au><au>Leem, Jae-Young</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method</atitle><jtitle>Optical materials</jtitle><date>2013-10-01</date><risdate>2013</risdate><volume>35</volume><issue>12</issue><spage>2418</spage><epage>2424</epage><pages>2418-2424</pages><issn>0925-3467</issn><eissn>1873-1252</eissn><abstract>•B-doped ZnO thin films were grown on quartz substrate by sol–gel dip-coating method.•The thickness of the thin films decreased with increasing concentration of B in the thin films.•The effects of B doping on optical and electrical properties of the ZnO thin films were investigated.
Sol–gel dip-coating was used to grow ZnO thin films doped with various concentrations of B ranging from 0 to 2.5at.% on quartz substrates. The effects of B doping on the absorption coefficient (α), optical band gap (Eg), Urbach energy (EU), refractive index (n), refractive index at infinite wavelength (n∞), extinction coefficient (k), single-oscillator energy (Eo), dispersion energy (Ed), average oscillator strength (So), average oscillator wavelength (λo), moments M−1 and M−3, dielectric constant (ε), optical conductivity (σ), and electrical resistivity (ρ) of the BZO thin films were investigated. The transmittance spectra of the ZnO and BZO thin films show that the transmittance of the BZO thin films was significantly higher than that of the ZnO thin films in the visible region of the spectrum and that the absorption edge of the BZO thin films was blue-shifted. The BZO thin films exhibited higher Eg, EU, and Eo and lower Ed, λo, M−1 and M−3 moments, So, n∞, and ρ than the ZnO thin films.</abstract><cop>Oxford</cop><pub>Elsevier B.V</pub><doi>10.1016/j.optmat.2013.06.048</doi><tpages>7</tpages></addata></record> |
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| subjects | B-doped Condensed matter: electronic structure, electrical, magnetic, and optical properties Dip coatings Electrical resistivity Exact sciences and technology Fundamental areas of phenomenology (including applications) Optical constants: refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity Optical materials Optical properties Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of bulk materials and thin films Optics Physics Refractivity Sol gel process Sol–gel Thin films Transmittance Wavelengths Zinc oxide |
| title | Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method |
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