Optical properties and electrical resistivity of boron-doped ZnO thin films grown by sol–gel dip-coating method

•B-doped ZnO thin films were grown on quartz substrate by sol–gel dip-coating method.•The thickness of the thin films decreased with increasing concentration of B in the thin films.•The effects of B doping on optical and electrical properties of the ZnO thin films were investigated. Sol–gel dip-coat...

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Veröffentlicht in:Optical materials 2013-10, Vol.35 (12), p.2418-2424
Hauptverfasser: Kim, Soaram, Yoon, Hyunsik, Kim, Do Yeob, Kim, Sung-O, Leem, Jae-Young
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Sprache:eng
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Zusammenfassung:•B-doped ZnO thin films were grown on quartz substrate by sol–gel dip-coating method.•The thickness of the thin films decreased with increasing concentration of B in the thin films.•The effects of B doping on optical and electrical properties of the ZnO thin films were investigated. Sol–gel dip-coating was used to grow ZnO thin films doped with various concentrations of B ranging from 0 to 2.5at.% on quartz substrates. The effects of B doping on the absorption coefficient (α), optical band gap (Eg), Urbach energy (EU), refractive index (n), refractive index at infinite wavelength (n∞), extinction coefficient (k), single-oscillator energy (Eo), dispersion energy (Ed), average oscillator strength (So), average oscillator wavelength (λo), moments M−1 and M−3, dielectric constant (ε), optical conductivity (σ), and electrical resistivity (ρ) of the BZO thin films were investigated. The transmittance spectra of the ZnO and BZO thin films show that the transmittance of the BZO thin films was significantly higher than that of the ZnO thin films in the visible region of the spectrum and that the absorption edge of the BZO thin films was blue-shifted. The BZO thin films exhibited higher Eg, EU, and Eo and lower Ed, λo, M−1 and M−3 moments, So, n∞, and ρ than the ZnO thin films.
ISSN:0925-3467
1873-1252
DOI:10.1016/j.optmat.2013.06.048