RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application

•Random telegraph noise and low-frequency noise in polysilicon device.•The impact of electron trapping and detrapping events in scaled non-volatile memories.•Behavior of gate oxide, interface and polysilicon traps in n-type polysilicon cylindrical vertical transistors. In this work the drain current...

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Veröffentlicht in:	Microelectronic engineering 2013-09, Vol.109, p.105-108
Hauptverfasser:	de Andrade, Maria Glória Caño, Toledano-Luque, María, Fourati, Fatma, Degraeve, Robin, Martino, João Antonio, Claeys, Cor, Simoen, Eddy, Van den Bosch, Geert, Van Houdt, Jan
Format:	Artikel
Sprache:	eng
Schlagworte:	Assessments Channels Drains Fluctuation Gates Noise NVM Oxides Polysilicon Random telegraph noise RTN Traps Vertical FET
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