Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells
The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluct...
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| Veröffentlicht in: | Journal of luminescence 2013-01, Vol.133 (1), p.125-128 |
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| container_end_page | 128 |
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| container_title | Journal of luminescence |
| container_volume | 133 |
| creator | Karcher, C. Jandieri, K. Kunert, B. Fritz, R. Volz, K. Stolz, W. Gebhard, F. Baranovskii, S.D. Heimbrodt, W. |
| description | The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content.
► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N. |
| doi_str_mv | 10.1016/j.jlumin.2011.10.002 |
| format | Article |
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► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.</description><identifier>ISSN: 0022-2313</identifier><identifier>EISSN: 1872-7883</identifier><identifier>DOI: 10.1016/j.jlumin.2011.10.002</identifier><identifier>CODEN: JLUMA8</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Absorptivity ; Computer simulation ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Disorder ; Disorders ; Dynamics ; Exact sciences and technology ; Fluctuation ; Iii-v semiconductors ; Luminescence ; Monte Carlo methods ; Monte-Carlo-simulation ; Multiquantum wells ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures ; Photoluminescence ; Physics ; Quantum wells ; Quaternary nitride alloys ; Stokes shift ; Strain</subject><ispartof>Journal of luminescence, 2013-01, Vol.133 (1), p.125-128</ispartof><rights>2011 Elsevier B.V.</rights><rights>2014 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c369t-6cf2b9fed733fb5220ae710a850750d1c892d4d72003c525960cb6eaa5e2a2ca3</citedby><cites>FETCH-LOGICAL-c369t-6cf2b9fed733fb5220ae710a850750d1c892d4d72003c525960cb6eaa5e2a2ca3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0022231311005680$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,4036,4037,23909,23910,25118,27901,27902,65534</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=26711232$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Karcher, C.</creatorcontrib><creatorcontrib>Jandieri, K.</creatorcontrib><creatorcontrib>Kunert, B.</creatorcontrib><creatorcontrib>Fritz, R.</creatorcontrib><creatorcontrib>Volz, K.</creatorcontrib><creatorcontrib>Stolz, W.</creatorcontrib><creatorcontrib>Gebhard, F.</creatorcontrib><creatorcontrib>Baranovskii, S.D.</creatorcontrib><creatorcontrib>Heimbrodt, W.</creatorcontrib><title>Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells</title><title>Journal of luminescence</title><description>The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content.
► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.</description><subject>Absorptivity</subject><subject>Computer simulation</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Disorder</subject><subject>Disorders</subject><subject>Dynamics</subject><subject>Exact sciences and technology</subject><subject>Fluctuation</subject><subject>Iii-v semiconductors</subject><subject>Luminescence</subject><subject>Monte Carlo methods</subject><subject>Monte-Carlo-simulation</subject><subject>Multiquantum wells</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Quantum wells</subject><subject>Quaternary nitride alloys</subject><subject>Stokes shift</subject><subject>Strain</subject><issn>0022-2313</issn><issn>1872-7883</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kM1Lw0AQxRdRsFb_Aw-5CBWadHY3nwhCqVqFoj3oednsTmBDPupuovjfm5Di0dPA4715Mz9CrikEFGi8KoOy6mvTBAwoHaQAgJ2QGU0T5idpyk_JbFCYzzjl5-TCuRIAeJZmM3L30PZ5hb5TskLtaeNaq9F6pvG2cvG6XLvl_na1lXuv7qvOfPay6fra-8aqcpfkrJCVw6vjnJOPp8f3zbO_e9u-bNY7X_E46_xYFSzPCtQJ50UeMQYSEwoyjSCJQFOVZkyHOmHDTSpiURaDymOUMkImmZJ8ThbT3oNtP3t0naiNU8MFssG2d4JGlIcxhxAGazhZlW2ds1iIgzW1tD-CghhZiVJMrMTIalQHMkPs5tggRxCFlY0y7i_L4oRSxkff_eTD4d0vg1Y4ZbBRqI1F1Qndmv-LfgGqFH9S</recordid><startdate>201301</startdate><enddate>201301</enddate><creator>Karcher, C.</creator><creator>Jandieri, K.</creator><creator>Kunert, B.</creator><creator>Fritz, R.</creator><creator>Volz, K.</creator><creator>Stolz, W.</creator><creator>Gebhard, F.</creator><creator>Baranovskii, S.D.</creator><creator>Heimbrodt, W.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201301</creationdate><title>Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells</title><author>Karcher, C. ; Jandieri, K. ; Kunert, B. ; Fritz, R. ; Volz, K. ; Stolz, W. ; Gebhard, F. ; Baranovskii, S.D. ; Heimbrodt, W.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c369t-6cf2b9fed733fb5220ae710a850750d1c892d4d72003c525960cb6eaa5e2a2ca3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Absorptivity</topic><topic>Computer simulation</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Disorder</topic><topic>Disorders</topic><topic>Dynamics</topic><topic>Exact sciences and technology</topic><topic>Fluctuation</topic><topic>Iii-v semiconductors</topic><topic>Luminescence</topic><topic>Monte Carlo methods</topic><topic>Monte-Carlo-simulation</topic><topic>Multiquantum wells</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Quantum wells</topic><topic>Quaternary nitride alloys</topic><topic>Stokes shift</topic><topic>Strain</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Karcher, C.</creatorcontrib><creatorcontrib>Jandieri, K.</creatorcontrib><creatorcontrib>Kunert, B.</creatorcontrib><creatorcontrib>Fritz, R.</creatorcontrib><creatorcontrib>Volz, K.</creatorcontrib><creatorcontrib>Stolz, W.</creatorcontrib><creatorcontrib>Gebhard, F.</creatorcontrib><creatorcontrib>Baranovskii, S.D.</creatorcontrib><creatorcontrib>Heimbrodt, W.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of luminescence</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Karcher, C.</au><au>Jandieri, K.</au><au>Kunert, B.</au><au>Fritz, R.</au><au>Volz, K.</au><au>Stolz, W.</au><au>Gebhard, F.</au><au>Baranovskii, S.D.</au><au>Heimbrodt, W.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells</atitle><jtitle>Journal of luminescence</jtitle><date>2013-01</date><risdate>2013</risdate><volume>133</volume><issue>1</issue><spage>125</spage><epage>128</epage><pages>125-128</pages><issn>0022-2313</issn><eissn>1872-7883</eissn><coden>JLUMA8</coden><abstract>The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content.
► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.jlumin.2011.10.002</doi><tpages>4</tpages></addata></record> |
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| subjects | Absorptivity Computer simulation Condensed matter: electronic structure, electrical, magnetic, and optical properties Disorder Disorders Dynamics Exact sciences and technology Fluctuation Iii-v semiconductors Luminescence Monte Carlo methods Monte-Carlo-simulation Multiquantum wells Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures Photoluminescence Physics Quantum wells Quaternary nitride alloys Stokes shift Strain |
| title | Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells |
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