Double-scaled disorder in Ga(N,As,P)/GaP multiquantum wells

The compositional dependence of the properties of metastable Ga(N,As,P) has been characterized optically by means of temperature dependent absorptive and emissive techniques. By assuming a two-scaled disorder within the alloy caused by microscopic composition fluctuations on the one hand and a fluctuation of strain fields or the well width on the other hand, Monte Carlo simulations of the carrier dynamics are in good agreement with the experimental findings. The compositional dependence further reveals an increase of disorder with decreasing nitrogen content. ► Temperature dependent spectral dataset of two Ga(N,As,P)/ MQWs with varying composition. ► High resolution TEM study revealing height fluctuations within the triple QWs. ► Two distinct scales of disorder corresponding to two spatial length scales. ► Almost perfect Monte-Carlo simulations of the experimental findings. ► Theoretical explanation of the discovered reduction of disorder with increasing N.