Effect of the magnetic field on optical properties of GaN/AlN multiple quantum wells

In this paper, the effect of the magnetic field and well number on the optical properties of a GaN/AlN MQWs with different number of wells and the energy levels have been investigated. Our results showed that as the magnetic field increases the values of the absorption coefficient also increases while a blue shift in their peak positions is observed. The blue shift for MQWs with odd well number was larger than the system with the even well number and the biggest blue shifts were related to MQWs with three and four well numbers. As the magnetic field changed, the values of the refractive index changes have shifted towards higher energies. Finally, the effect of the magnetic field on the oscillator strength showed that as the magnetic field increases the oscillator strength decreases and it is also proportional to the number of wells. ► Increase of absorption coefficient by increase of magnetic field will show a blue shift. ► As the magnetic field increased the oscillator strength decreased. ► Total effective intersubband oscillator strength was proportional to the number of wells. ► Minibands form after 10 wells, thus our results are valid for systems with well width up to 3nm.