Fabrication of magnesium silicide thin films by pulsed ion beam ablation in a 1.6 kJ plasma focus device

The production of magnesium silicide (Mg2Si) thin films on silicon (1 0 0) at room temperature using a low energy (1.6 kJ) plasma focus device is reported. The conventional hollow copper anode is replaced by anode fitted with solid magnesium top and the deposition is done using different numbers of deposition shots (5, 10, 15 and 20). The interaction of the high energy magnesium ion beams with silicon (1 0 0) substrates using different number of deposition shots, result in the formation of surface coatings, with different characteristic structures and morphologies. X-ray diffraction (XRD) analysis reveals that crystal structure characteristics of obtained thin films strongly depend on number of deposition shots. The structure growth and variation in surface smoothness with increasing of deposition shots is revealed by scanning electron microscope (SEM) micrographs and atomic force microscopy (AFM) images. Moreover, AFM results revealed that the distribution of grain sizes on the surface of samples and surface roughness of deposited thin films increase with the number of deposition shots. Also the average thickness of deposited samples tested with surface profiler. ► Deposition of magnesium silicide films on silicon (100) substrates. ► Using plasma focus device for the specific film deposition. ► Interactions between high energy magnesium ions and silicon (100) substrates. ► Analysis of structural properties of deposited films using XRD spectra. ► Analysis of surface morphology of deposited films using SEM and AFM images.