Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations

Diamond film on high-Cobalt containing tungsten carbide is explored for specific geologic explorations. A 153 μm thick diamond film was synthesized using a SiC interlayer, and its micro-structural and frictional properties were investigated accordingly. The results show that: (i) the film exhibits a...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Vacuum 2013-08, Vol.94, p.53-56
Hauptverfasser: Yu, Xiang, Liu, Yang, Ma, Lei, Yang, Gansheng, Wang, Chengbiao
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 56
container_issue
container_start_page 53
container_title Vacuum
container_volume 94
creator Yu, Xiang
Liu, Yang
Ma, Lei
Yang, Gansheng
Wang, Chengbiao
description Diamond film on high-Cobalt containing tungsten carbide is explored for specific geologic explorations. A 153 μm thick diamond film was synthesized using a SiC interlayer, and its micro-structural and frictional properties were investigated accordingly. The results show that: (i) the film exhibits a well-grown and dense columnar structure in the depth direction, and its preferred crystallographic orientation lies at 2θ = 75.2° for the diamond plane (220); (ii) an approximately 7-μm-thick intermediate SiC layer between the film and substrate buffers Cobalt diffusion is evidently favorable for depositing diamond film; (iii) a sharp peak around 1332.7 cm−1 in Raman spectra indicates that the film possesses the distinct diamond nature, and it is mainly composed of diamond crystallites in quality; and (iv) the average friction coefficients in three environments are 0.134 in dry friction, 0.0413 in oil lubrication, and 0.184 in mortar. ► Diamond film on high-Co WC has sought for specific geologic explorations. ► Diamond films thick to 153 μm are synthesized on YG12 in HFCVD process. ► 7-μm-thick SiC interlayer buffers Co diffusion well without chemical pretreatment. ► Frictional properties of diamond film under three modes are compared.
doi_str_mv 10.1016/j.vacuum.2013.01.022
format Article
fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1513446472</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><els_id>S0042207X13000353</els_id><sourcerecordid>1513446472</sourcerecordid><originalsourceid>FETCH-LOGICAL-c339t-734207f272b3586e1532685fb13b0dbb4dd37304872406ce8ecf136c7633ccff3</originalsourceid><addsrcrecordid>eNp9kLtu3DAQRQkjAbxx_AcuWKaRzJdEuTEQbF4GDKTIA-kIihrKs5bEDUltYvjnQ3tdp5pmzp25h5ALzmrOeHu5qw_WretcC8ZlzXjNhDghG97pq0po3rwiG8aUqATTv07Jm5R2jDHRsm5DHm-WA6SMo80YFho8zXfo7un25wc6oJ3DMlCP00z_YL6j33BLcckQJ_sAkRYgr8uYMizU2djjANSHSPchJewnoGuyIxSCjhCmMKKj8Hc_hfh8LL0lr72dEpy_zDPy49PH79sv1e3Xzzfb97eVk_IqV1qq8rgXWvSy6VrgjRRt1_iey54Nfa-GQWrJVKeFYq2DDpznsnW6ldI57-UZeXfM3cfwey1tzYzJwTTZBcKaDG-4VKpVWpRVdVx1sXSI4M0-4mzjg-HMPLk2O3N0bZ5cG8ZNcV2w6yMGpcYBIZrkEBYHA0Zw2QwB_x_wD-MTi20</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1513446472</pqid></control><display><type>article</type><title>Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations</title><source>Elsevier ScienceDirect Journals Complete</source><creator>Yu, Xiang ; Liu, Yang ; Ma, Lei ; Yang, Gansheng ; Wang, Chengbiao</creator><creatorcontrib>Yu, Xiang ; Liu, Yang ; Ma, Lei ; Yang, Gansheng ; Wang, Chengbiao</creatorcontrib><description>Diamond film on high-Cobalt containing tungsten carbide is explored for specific geologic explorations. A 153 μm thick diamond film was synthesized using a SiC interlayer, and its micro-structural and frictional properties were investigated accordingly. The results show that: (i) the film exhibits a well-grown and dense columnar structure in the depth direction, and its preferred crystallographic orientation lies at 2θ = 75.2° for the diamond plane (220); (ii) an approximately 7-μm-thick intermediate SiC layer between the film and substrate buffers Cobalt diffusion is evidently favorable for depositing diamond film; (iii) a sharp peak around 1332.7 cm−1 in Raman spectra indicates that the film possesses the distinct diamond nature, and it is mainly composed of diamond crystallites in quality; and (iv) the average friction coefficients in three environments are 0.134 in dry friction, 0.0413 in oil lubrication, and 0.184 in mortar. ► Diamond film on high-Co WC has sought for specific geologic explorations. ► Diamond films thick to 153 μm are synthesized on YG12 in HFCVD process. ► 7-μm-thick SiC interlayer buffers Co diffusion well without chemical pretreatment. ► Frictional properties of diamond film under three modes are compared.</description><identifier>ISSN: 0042-207X</identifier><identifier>EISSN: 1879-2715</identifier><identifier>DOI: 10.1016/j.vacuum.2013.01.022</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>Cemented carbide ; Columnar structure ; Crystallites ; Diamond coating ; Diamond films ; Diamonds ; Geologic exploration ; Geology ; Interlayers ; Microstructure ; Silicon carbide ; Tungsten carbide</subject><ispartof>Vacuum, 2013-08, Vol.94, p.53-56</ispartof><rights>2013 Elsevier Ltd</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c339t-734207f272b3586e1532685fb13b0dbb4dd37304872406ce8ecf136c7633ccff3</citedby><cites>FETCH-LOGICAL-c339t-734207f272b3586e1532685fb13b0dbb4dd37304872406ce8ecf136c7633ccff3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0042207X13000353$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Yu, Xiang</creatorcontrib><creatorcontrib>Liu, Yang</creatorcontrib><creatorcontrib>Ma, Lei</creatorcontrib><creatorcontrib>Yang, Gansheng</creatorcontrib><creatorcontrib>Wang, Chengbiao</creatorcontrib><title>Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations</title><title>Vacuum</title><description>Diamond film on high-Cobalt containing tungsten carbide is explored for specific geologic explorations. A 153 μm thick diamond film was synthesized using a SiC interlayer, and its micro-structural and frictional properties were investigated accordingly. The results show that: (i) the film exhibits a well-grown and dense columnar structure in the depth direction, and its preferred crystallographic orientation lies at 2θ = 75.2° for the diamond plane (220); (ii) an approximately 7-μm-thick intermediate SiC layer between the film and substrate buffers Cobalt diffusion is evidently favorable for depositing diamond film; (iii) a sharp peak around 1332.7 cm−1 in Raman spectra indicates that the film possesses the distinct diamond nature, and it is mainly composed of diamond crystallites in quality; and (iv) the average friction coefficients in three environments are 0.134 in dry friction, 0.0413 in oil lubrication, and 0.184 in mortar. ► Diamond film on high-Co WC has sought for specific geologic explorations. ► Diamond films thick to 153 μm are synthesized on YG12 in HFCVD process. ► 7-μm-thick SiC interlayer buffers Co diffusion well without chemical pretreatment. ► Frictional properties of diamond film under three modes are compared.</description><subject>Cemented carbide</subject><subject>Columnar structure</subject><subject>Crystallites</subject><subject>Diamond coating</subject><subject>Diamond films</subject><subject>Diamonds</subject><subject>Geologic exploration</subject><subject>Geology</subject><subject>Interlayers</subject><subject>Microstructure</subject><subject>Silicon carbide</subject><subject>Tungsten carbide</subject><issn>0042-207X</issn><issn>1879-2715</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNp9kLtu3DAQRQkjAbxx_AcuWKaRzJdEuTEQbF4GDKTIA-kIihrKs5bEDUltYvjnQ3tdp5pmzp25h5ALzmrOeHu5qw_WretcC8ZlzXjNhDghG97pq0po3rwiG8aUqATTv07Jm5R2jDHRsm5DHm-WA6SMo80YFho8zXfo7un25wc6oJ3DMlCP00z_YL6j33BLcckQJ_sAkRYgr8uYMizU2djjANSHSPchJewnoGuyIxSCjhCmMKKj8Hc_hfh8LL0lr72dEpy_zDPy49PH79sv1e3Xzzfb97eVk_IqV1qq8rgXWvSy6VrgjRRt1_iey54Nfa-GQWrJVKeFYq2DDpznsnW6ldI57-UZeXfM3cfwey1tzYzJwTTZBcKaDG-4VKpVWpRVdVx1sXSI4M0-4mzjg-HMPLk2O3N0bZ5cG8ZNcV2w6yMGpcYBIZrkEBYHA0Zw2QwB_x_wD-MTi20</recordid><startdate>20130801</startdate><enddate>20130801</enddate><creator>Yu, Xiang</creator><creator>Liu, Yang</creator><creator>Ma, Lei</creator><creator>Yang, Gansheng</creator><creator>Wang, Chengbiao</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20130801</creationdate><title>Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations</title><author>Yu, Xiang ; Liu, Yang ; Ma, Lei ; Yang, Gansheng ; Wang, Chengbiao</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c339t-734207f272b3586e1532685fb13b0dbb4dd37304872406ce8ecf136c7633ccff3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>Cemented carbide</topic><topic>Columnar structure</topic><topic>Crystallites</topic><topic>Diamond coating</topic><topic>Diamond films</topic><topic>Diamonds</topic><topic>Geologic exploration</topic><topic>Geology</topic><topic>Interlayers</topic><topic>Microstructure</topic><topic>Silicon carbide</topic><topic>Tungsten carbide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yu, Xiang</creatorcontrib><creatorcontrib>Liu, Yang</creatorcontrib><creatorcontrib>Ma, Lei</creatorcontrib><creatorcontrib>Yang, Gansheng</creatorcontrib><creatorcontrib>Wang, Chengbiao</creatorcontrib><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Vacuum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yu, Xiang</au><au>Liu, Yang</au><au>Ma, Lei</au><au>Yang, Gansheng</au><au>Wang, Chengbiao</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations</atitle><jtitle>Vacuum</jtitle><date>2013-08-01</date><risdate>2013</risdate><volume>94</volume><spage>53</spage><epage>56</epage><pages>53-56</pages><issn>0042-207X</issn><eissn>1879-2715</eissn><abstract>Diamond film on high-Cobalt containing tungsten carbide is explored for specific geologic explorations. A 153 μm thick diamond film was synthesized using a SiC interlayer, and its micro-structural and frictional properties were investigated accordingly. The results show that: (i) the film exhibits a well-grown and dense columnar structure in the depth direction, and its preferred crystallographic orientation lies at 2θ = 75.2° for the diamond plane (220); (ii) an approximately 7-μm-thick intermediate SiC layer between the film and substrate buffers Cobalt diffusion is evidently favorable for depositing diamond film; (iii) a sharp peak around 1332.7 cm−1 in Raman spectra indicates that the film possesses the distinct diamond nature, and it is mainly composed of diamond crystallites in quality; and (iv) the average friction coefficients in three environments are 0.134 in dry friction, 0.0413 in oil lubrication, and 0.184 in mortar. ► Diamond film on high-Co WC has sought for specific geologic explorations. ► Diamond films thick to 153 μm are synthesized on YG12 in HFCVD process. ► 7-μm-thick SiC interlayer buffers Co diffusion well without chemical pretreatment. ► Frictional properties of diamond film under three modes are compared.</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.vacuum.2013.01.022</doi><tpages>4</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0042-207X
ispartof Vacuum, 2013-08, Vol.94, p.53-56
issn 0042-207X
1879-2715
language eng
recordid cdi_proquest_miscellaneous_1513446472
source Elsevier ScienceDirect Journals Complete
subjects Cemented carbide
Columnar structure
Crystallites
Diamond coating
Diamond films
Diamonds
Geologic exploration
Geology
Interlayers
Microstructure
Silicon carbide
Tungsten carbide
title Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-07T14%3A10%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20thick%20CVD%20diamond%20film%20with%20SiC%20interlayer%20on%20tungsten%20carbide%20for%20possible%20usage%20in%20geologic%20explorations&rft.jtitle=Vacuum&rft.au=Yu,%20Xiang&rft.date=2013-08-01&rft.volume=94&rft.spage=53&rft.epage=56&rft.pages=53-56&rft.issn=0042-207X&rft.eissn=1879-2715&rft_id=info:doi/10.1016/j.vacuum.2013.01.022&rft_dat=%3Cproquest_cross%3E1513446472%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1513446472&rft_id=info:pmid/&rft_els_id=S0042207X13000353&rfr_iscdi=true