Investigation of thick CVD diamond film with SiC interlayer on tungsten carbide for possible usage in geologic explorations

Diamond film on high-Cobalt containing tungsten carbide is explored for specific geologic explorations. A 153 μm thick diamond film was synthesized using a SiC interlayer, and its micro-structural and frictional properties were investigated accordingly. The results show that: (i) the film exhibits a well-grown and dense columnar structure in the depth direction, and its preferred crystallographic orientation lies at 2θ = 75.2° for the diamond plane (220); (ii) an approximately 7-μm-thick intermediate SiC layer between the film and substrate buffers Cobalt diffusion is evidently favorable for depositing diamond film; (iii) a sharp peak around 1332.7 cm−1 in Raman spectra indicates that the film possesses the distinct diamond nature, and it is mainly composed of diamond crystallites in quality; and (iv) the average friction coefficients in three environments are 0.134 in dry friction, 0.0413 in oil lubrication, and 0.184 in mortar. ► Diamond film on high-Co WC has sought for specific geologic explorations. ► Diamond films thick to 153 μm are synthesized on YG12 in HFCVD process. ► 7-μm-thick SiC interlayer buffers Co diffusion well without chemical pretreatment. ► Frictional properties of diamond film under three modes are compared.