Pulse electrodeposited copper indium sulpho selenide films and their properties

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15s ON and 15s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope stud...

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Veröffentlicht in:	Materials science in semiconductor processing 2013-12, Vol.16 (6), p.1665-1671
Hauptverfasser:	Shanmugavel, A., Srinivasan, K., Murali, K.R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences CHALCOPYRITE Condensed matter: electronic structure, electrical, magnetic, and optical properties Copper COPPER INDIUM SULFIDE Cross-disciplinary physics: materials science rheology ELECTRICAL CONDUCTIVITY ELECTRODEPOSITION Electrodeposition, electroplating ELECTRODES Electronic materials Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in multilayers, nanoscale materials and structures Electronics Energy Exact sciences and technology Illumination Indium I–III–VI2 Materials science Methods of deposition of films and coatings film growth and epitaxy Microelectronic fabrication (materials and surfaces technology) Natural energy Photovoltaic conversion Physics PLATING Pulse plating SELENIDES Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SEMICONDUCTORS Solar cells. Photoelectrochemical cells Solar energy Thin films
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Zusammenfassung:	Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15s ON and 15s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10nm–40nm as the selenium content increased. The band gap of the films was in the range of 0.95eV–1.44eV. Room temperature resistivity of the films is in the range of 16.0Ωcm–33.0Ωcm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition, CuInS0.9Se0.1 have exhibited maximum output, a VOC of 0.74V, JSC of 18.50mAcm−2, ff of 0.75 and efficiency of 11.40% for 60mWcm−2 illumination.
ISSN:	1369-8001 1873-4081
DOI:	10.1016/j.mssp.2013.05.002