Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters

Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters

We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm(-2...

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Veröffentlicht in:Optics express 2014-02, Vol.22 (3), p.3234-3243
Hauptverfasser: McBryde, D, Barnes, M E, Berry, S A, Gow, P, Beere, H E, Ritchie, D A, Apostolopoulos, V
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Sprache:eng
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Zusammenfassung:We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm(-2). SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.22.003234