GaAs nanopillars by self-assembled droplet etching
GaAs nanopillars are fabricated using a combination of in situ self-organized local droplet etching of nanoholes in a semiconductor surface, nanohole filling with a different material, and ex situ material selective etching. The structural properties of the pillars are studied with atomic-force micr...
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Veröffentlicht in: | Journal of crystal growth 2013-09, Vol.378, p.446-449 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | GaAs nanopillars are fabricated using a combination of in situ self-organized local droplet etching of nanoholes in a semiconductor surface, nanohole filling with a different material, and ex situ material selective etching. The structural properties of the pillars are studied with atomic-force microscopy. Experimental pillar densities are analyzed using a scaling law. Furthermore, the thermal transport through ensembles of pillars is measured. The results show a clear correlation between the pillar density and the thermal conductivity which is several orders of magnitude reduced in comparison to the bulk.
► Nanopillars are fabricated by in situ droplet etching and ex situ selective etching. ► Nanopillars stabilize epitaxial layers in air-gap heterostructures. ► Ballistic thermal conductance through nanopillars. ► Nanopillars shape and density influence the thermal conductance. |
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ISSN: | 0022-0248 1873-5002 |
DOI: | 10.1016/j.jcrysgro.2012.12.048 |