GaAs nanopillars by self-assembled droplet etching

GaAs nanopillars are fabricated using a combination of in situ self-organized local droplet etching of nanoholes in a semiconductor surface, nanohole filling with a different material, and ex situ material selective etching. The structural properties of the pillars are studied with atomic-force micr...

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Veröffentlicht in:Journal of crystal growth 2013-09, Vol.378, p.446-449
Hauptverfasser: Heyn, Ch, Sonnenberg, D., Bartsch, Th, Wetzel, A., Kerbst, J., Hansen, W.
Format: Artikel
Sprache:eng
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Zusammenfassung:GaAs nanopillars are fabricated using a combination of in situ self-organized local droplet etching of nanoholes in a semiconductor surface, nanohole filling with a different material, and ex situ material selective etching. The structural properties of the pillars are studied with atomic-force microscopy. Experimental pillar densities are analyzed using a scaling law. Furthermore, the thermal transport through ensembles of pillars is measured. The results show a clear correlation between the pillar density and the thermal conductivity which is several orders of magnitude reduced in comparison to the bulk. ► Nanopillars are fabricated by in situ droplet etching and ex situ selective etching. ► Nanopillars stabilize epitaxial layers in air-gap heterostructures. ► Ballistic thermal conductance through nanopillars. ► Nanopillars shape and density influence the thermal conductance.
ISSN:0022-0248
1873-5002
DOI:10.1016/j.jcrysgro.2012.12.048