Scalable Fabrication of Ambipolar Transistors and Radio-Frequency Circuits Using Aligned Carbon Nanotube Arrays

Field‐effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doub...

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Veröffentlicht in:Advanced materials (Weinheim) 2014-01, Vol.26 (4), p.645-652
Hauptverfasser: Wang, Zhenxing, Liang, Shibo, Zhang, Zhiyong, Liu, Honggang, Zhong, Hua, Ye, Lin-Hui, Wang, Sheng, Zhou, Weiwei, Liu, Jie, Chen, Yabin, Zhang, Jin, Peng, Lian-Mao
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Sprache:eng
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Zusammenfassung:Field‐effect transistors (FETs) are fabricated on a large scale and with a high yield of over 95% based on aligned carbon nanotube arrays directly grown on quartz, and exhibit ambipolar transfer characteristics that can be used to construct ambipolar RF circuits. RF circuits including frequency doubler and mixer based on the ambipolar FETs demonstrate unequivocally working frequency up to 40 GHz.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201302793