Investigation of dislocation structures in ribbon- and ingot-grown multicrystalline silicon

In this paper, an experimental study of dislocation structures in multicrystalline silicon is presented. The alignment of dislocations in samples from both edge-defined film-fed growth and ingot crystallization by vertical Bridgman growth is investigated. Crystallographic orientations of single grai...

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Veröffentlicht in:	Journal of crystal growth 2013-11, Vol.382, p.41-46
Hauptverfasser:	Schmid, E., Funke, C., Behm, T., Pätzold, O., Berek, H., Stelter, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Crystal structure A1. Defects A2. Bridgman technique A2. Edge defined film fed growth A2. Growth from melt Alignment B2. Semiconducting silicon Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Defects and impurities in crystals microstructure Equations of state, phase equilibria, and phase transitions Exact sciences and technology Linear defects: dislocations, disclinations Materials science Methods of crystal growth physics of crystal growth Physics Solid-solid transitions Specific phase transitions Structure of solids and liquids crystallography Structure of specific crystalline solids Theory and models of crystal growth physics of crystal growth, crystal morphology and orientation
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